Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

The method is for dividing dark objects, substructures and background of an image from an electron microscope into segments by analyzing pixel values. The segments are transformed and aligned so that the transformed objects, sub-structures and background are meaningfully comparable. The transformed segments are clustered into classes which are used for ontological investigation of samples that are visualized by using electron microscopy. A triangle inequality comparison can be used to further cluster groups of objects to transfer understanding from different interactions between objects and to associate interactions with each other.

Disclosed herein are charged particle microscopy (CPM) support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, a CPM support apparatus may include: first logic to cause a CPM to generate a single image of a first portion of a specimen; second logic to generate a first mask based on one or more regions-of-interest provided by user annotation of the single image; and third logic to train a machine-learning model using the single image and the one or more regions-of-interest. The first logic may cause the CPM to generate multiple images of corresponding multiple additional portions of the specimen, and the second logic may, after the machine-learning model is trained using the single image and the one or more regions-of-interest, generate multiple masks based on the corresponding images of the additional portions of the specimen using the machine-learning model without retraining.

A system and method for imaging a biological sample using a freezable fluid cell system is disclosed. The freezable fluid cell comprises a top chip, a bottom chip, and a spacer to control the thickness of a vitrified biological sample. The spacer is positioned between the top chip and the bottom chip to define a channel that is in fluid communication with an inlet port and an exit port to the freezable fluid cell system. The channel can be filled with a biological sample, vitrified, and imaged to produce high-resolution electron microscopic image.

Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

Apparatuses and methods for automated grid validation are disclosed herein. An example method at least includes imaging a grid, the grid including a support portion and a plurality of posts extending from the support portion, wherein each post of the plurality of posts has a designated weld location, and determining, based on the image, whether the designated weld location of each post of the plurality of posts is valid.

A charged particle beam device 100 includes: an irradiation unit 110 configured to irradiate a sample S with a charged particle beam; a particle detection unit 130 configured to detect a particle caused by the irradiation of the sample with the charged particle beam; and a control unit 151 configured to generate an image of the sample based on an output from the particle detection unit, wherein the control unit 151 inputs the image of the sample S into models M1 and M2 for detecting a first structure 401 and a second structure 402, acquires a first detection result related to the first structure 401 and a second detection result related to the second structure 402 from the models M1 and M2, determines locations or regions of the first structure 401 and the second structure 402 based on the first detection result and the second detection result, and outputs an integration result image 203 representing the location or the region of the first structure 401 and the location or the region of the second structure 402.

A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.