A multi-electron beam inspection apparatus includes a multi-detector that includes a plurality of detection sensors each of which detects a secondary electron beam emitted due to that a target object is irradiated with a primary electron beam individually preset in multiple secondary electron beams emitted because the target object is irradiated with multiple primary electron beams, a reference image data generation circuit that generates reference image data of a position irradiated with each primary electron beam, based on design data serving as a basis of the pattern formed on the target object, a synthesis circuit that synthesizes, for each primary electron beam, the reference image data of the position irradiated with a primary electron beam concerned and portions of reference image data of positions irradiated with other primary electron beams different from the primary electron beam concerned, and a comparison circuit that compares synthetic reference image data having been synthesized, and secondary electron image data based on a value detected by the detection sensor which detects a secondary electron beam due to irradiation with the primary electron beam concerned.

In a charged particle beam device, a control unit performs processing for: operating a deflector based on movement information to move a visual field of a deflector from a first visual field to a second visual field; capturing the sample image with the second visual field to obtain a reference image; operating the deflector to move the visual field from the second visual field to the first visual field; operating the sample stage based on the movement information to move the visual field from the first visual field to a third visual field; capturing the sample image with the third visual field to obtain a comparison image; calculating a positional deviation amount between the reference image and the comparison image; determining whether the positional deviation amount is equal to or less than a designated positional deviation amount; and operating the sample stage based on the positional deviation amount.

A method, a non-transitory computer readable medium and a three-dimensional evaluation system for providing three dimensional information regarding structural elements of a specimen. The method can include illuminating the structural elements with electron beams of different incidence angles, where the electron beams pass through the structural elements and the structural elements are of nanometric dimensions; detecting forward scattered electrons that are scattered from the structural elements to provide detected forward scattered electrons; and generating the three dimensional information regarding structural elements based at least on the detected forward scattered electrons.

Apparatuses and methods for aligning lamella to charged particle beams based on a volume reconstruction are disclosed herein. An example method at least includes forming a reconstructed volume of a portion of a sample, the sample including a plurality of structures, and the reconstructed volume including a portion of the plurality of structures, performing, over a range of angles, a mathematical transform on each plane of a plurality of planes of the reconstructed volume, and based on the mathematical transform on each plane of the plurality of planes, determining a target orientation of the sample within the range of angles, wherein the target orientation aligns the plurality of structures parallel to an optical axis of a charged particle beam.

Mask-modulated spectra are incident to a sensor and are summed during a frame time. After the frame time, a compressed spectrum is read out based on the sum and decompressed to obtain spectra for some or all specimen locations. The mask-modulated spectrum that are summed are associated with different modulations produced by a common mask.

Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit. A control unit adjusts the position of a measurement area in the first image based on a first template image for the first image, and adjusts the position of a measurement area in the second image based on a second template image for the second image.

A method generates a crystalline orientation map of a surface portion of a sample. A crystalline orientation map represents crystalline orientations at a plurality of sample locations of the surface portion. The method comprises recording an image of the surface portion including a central location using particles of a charged particle beam directed to the surface portion and backscattering from the surface portion for each of a plurality of different orientation settings. Each of the orientation settings is defined by an azimuthal angle and an elevation angle under which the charged particle beam is incident onto the central location during the recording of the respective image. The method also includes generating the crystalline orientation map based on the recorded images.

Fiducial coordinates are obtained by aligning template with region of interest extracted from a workpiece image. Image values in the region of interest are projected along a template axis and the project values evaluated to establish a fiducial location which can be used as a reference location for locating workpiece areas for ion beam milling or other processing.

There is provided a beam alignment method capable of easily aligning an electron beam with a coma-free axis in an electron microscope. The method starts with tilting the electron beam (EB) in a first direction (+X) relative to a reference axis (A) and obtaining a first TEM (transmission electron microscope) image. Then, the beam is tilted in a second direction (−X) relative to the reference axis, the second direction (−X) being on the opposite side of the reference axis (A) from the first direction (+X), and a second TEM image is obtained. The reference axis is incrementally varied so as to reduce the brightness of the differential image between a power spectrum of the first TEM image and a power spectrum of the second TEM image.