A scanning electron microscope capable of properly determining a step of a step pattern formed on a sample regardless of combination of material of a groove of the step pattern and material of a projection of the step pattern, the scanning electron microscope includes a beam source, a detection unit having a first detection unit that detects a secondary electron emitted from the sample at an angle between an optical axis direction of the primary electron beam which is equal to or less than a predetermined value, and a second detection unit that detects a secondary electron emitted from the sample at an angle between the optical axis direction of the primary electron beam which is greater than the predetermined value, and a processing unit to obtain information on the step pattern using the information on a ratio between signals outputted from the first and the second detection unit.

A scanning electron microscopy system is disclosed. The system includes a sample stage configured to secure a sample having conducting structures disposed on an insulating substrate. The system includes an electron-optical column including an electron source configured to generate a primary electron beam and a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The system includes a detector assembly configured to detect electrons emanating from the surface of the sample. The system includes a controller communicatively coupled to the detector assembly. The controller is configured to direct the electron-optical column and stage to perform, with the primary electron beam, an alternating series of image scans and flood scans of the portion of the sample, wherein each of the flood scans are performed sequential to one or more of the imaging scans.

An electron microscope capable of measuring aberrations accurately is provided. The microscope is adapted to obtain scanning transmission electron (STEM) images by detecting electrons transmitted through a sample (S). The microscope (100) includes a segmented detector (20) having a detection surface (23) for detecting the electrons transmitted through the sample (S). The detection surface (23) is divided into detector segments (D1-D16) for detecting the electrons transmitted through the sample (S). The microscope (100) further includes an aperture plate (30) for limiting the active areas of the detector segments (D1-D16) on which the electrons impinge.

Disclosed herein is a method for cross-section processing and observation, and apparatus therefore, the method including: performing a position information obtaining process of observing the entirety of a sample by using an optical microscope or an electron microscope, and of obtaining three-dimensional position coordinate information of a particular observation target object included in the sample; performing a cross-section processing process of irradiating a particular region in which the object is present by using a focused ion beam based on the information, and of exposing a cross section of the region; performing a cross-section image obtaining process of irradiating the cross section by using an electron beam, and of obtaining a cross-section image of a predetermined size region including the object; and performing a three-dimensional image obtaining process of repeating the cross-section processing process and the cross-section image obtaining process at predetermined intervals in a predetermined direction, and of obtaining a three-dimensional image from obtained multiple cross-section images.

An inspection apparatus according to an embodiment includes an irradiation part configured to irradiate an inspection target substrate with multiple beams including energy beams, a detector, on which a plurality of charged particle beams of charged particles released from the inspection target substrate are imaged, configured to detect each of the charged particle beams as an electrical signal, and a comparing unit configured to compare reference image data and image data that is reproduced based on the detected electrical signals and that represents patterns formed on the inspection target substrate to inspect the patterns. The detector includes a plurality of detecting elements corresponding one-to-one to the charged particle beams. The detecting elements each have a size greater than a size that covers a beam blur of each charged particle beam imaged on the detector.

A charged-particle-beam device is provided with a data processing unit that removes, from a detector signal, the effect that scattering of a primary charged-particle beam before the primary charged-particle beam reaches a specimen has on the spot shape of the primary charged-particle beam. For example, when using an electron microscope to observe a specimen in a non-vacuum atmosphere, the effect that scattering of a primary charged-particle beam due to a barrier film or a gas present in a non-vacuum space has on the spot shape of the primary charged-particle beam is removed from a signal acquired by a detector. This makes it easy to obtain high-quality images.

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

Methods for drift corrected, fast, low dose, adaptive sample imaging with a charged particle microscopy system include scanning a surface region of a sample with a charged particle beam to obtain a first image of the surface region with a first detector modality, and then determining a scan strategy for the surface region. The scan strategy comprises a charged particle beam path, a first beam dwell time associated with at least one region of interest in the first image, the first beam dwell time being sufficient to obtain statistically significant data from a second detector modality, and at least a second beam dwell time associated with other regions of the first image, wherein the first beam dwell time is different than the second beam dwell time. The surface region of the sample is then scanned with the determined scan strategy to obtain data from the first and second detector.

In a charged particle beam device, a control unit performs processing for: operating a deflector based on movement information to move a visual field of a deflector from a first visual field to a second visual field; capturing the sample image with the second visual field to obtain a reference image; operating the deflector to move the visual field from the second visual field to the first visual field; operating the sample stage based on the movement information to move the visual field from the first visual field to a third visual field; capturing the sample image with the third visual field to obtain a comparison image; calculating a positional deviation amount between the reference image and the comparison image; determining whether the positional deviation amount is equal to or less than a designated positional deviation amount; and operating the sample stage based on the positional deviation amount.