An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

A system for detecting particles in a gas stream comprises a Faraday collector separating charged particles into positive and negative streams to be detected. The Faraday collector includes a plurality of interdigitated wires, with a first plurality of wires charged with a positive potential and a second plurality of wires charged with a negative potential to separate particles in the gas stream into the positive and negative streams.

A system and method for creating a beam current profile that eliminates variations that are not position dependent is disclosed. The system includes two Faraday sensors; one which is moved across the ion beam and a second that remains at or near a certain location. The reference Faraday sensor is used to measure temporal variations in the beam current, while the movable Faraday sensor measures both the position dependent variations and the temporal variations. By combining these measurements, the actual position dependent variations of the scanned ion beam can be determined. This resultant beam current profile can then be used to control the scan speed of the electrostatic or magnetic scanner.

The present invention relates generally to the field of sensors for beam imaging and, in particular, to a new and useful beam imaging sensor for use in determining, for example, the power density distribution of a beam including, but not limited to, an electron beam or an ion beam. In one embodiment, the beam imaging sensor of the present invention comprises, among other items, a circumferential slit that is either circular, elliptical or polygonal in nature. In another embodiment, the beam imaging sensor of the present invention comprises, among other things, a discontinuous partially circumferential slit. Also disclosed is a method for using the various beams sensor embodiments of the present invention.

An ion angle detector includes a front plate that includes an aperture configured to form an ion beam from incident ions. An ion collector of the detector is configured to measure ion flux from the ion beam. A linear actuator is mechanically coupled to the ion collector and configured to move the ion collector in a direction parallel to the ion beam. Ion angular distribution of a plasma may be measured using the detector by moving the ion collector parallel to the ion beam, measuring ion flux while moving the ion collector to obtain the flux as a function of distance from the source location, and obtaining the angular distribution from the flux and the distance. The ion angle detector may be disposed in a chamber of a plasma system that has a controller operatively coupled to the detector and configured to measure ion angular distribution.

An ion energy detector includes an ion shield that includes an aperture configured to produce an ion beam from incident ions, an ion collector disposed in a fixed position behind the ion shield, and an ion deflector that includes a pair of parallel plates disposed behind the ion shield. The ion beam travels behind the ion shield along an axis of the aperture. The ion collector is offset from the axis of the aperture. The pair of parallel plates are configured to generate an electric field to deflect the ion beam off the axis and toward the ion collector. The ion energy detector may be included in a detection system and be in physical contact with a substrate, such as on or embedded in the substrate. The ion shield may include an outer surface that has the same electric potential as the substrate.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

A method for substrate processing includes performing a local substrate process with a processing beam or flux on a substrate disposed in a process chamber. The processing beam or flux is ionized with an ionization current. An output current of the processing beam or flux is measured while performing the local substrate process. The ionization current for the local substrate process is controlled by keeping a product of the measured output current with the ionization current within a tolerance of a set point for the product of the measured output current with the ionization current.