Systems and methods for conducting charged particle beam modulation are disclosed. According to certain embodiments, a charged particle beam apparatus generates a plurality of charged particle beams. A modulator may be configured to receive the plurality of charged particle beams and generate a plurality of modulated charged particle beams. A detector may be configured to receive the plurality of modulated charged particle beams.

A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

A detector, comprising: a semiconductor substrate which detects an incident electron beam; a supporting substrate which is thicker than the semiconductor substrate and which supports the semiconductor substrate; and an insulating film layer which is provided between the semiconductor substrate and the supporting substrate, wherein at least one charge suppression film which is not electrically connected to the semiconductor substrate is formed inside the insulating film layer.

Detectors and detection systems are disclosed. According to certain embodiments, a detector comprises a substrate comprising a plurality of sensing elements including a first sensing element and a second sensing element, wherein at least the first sensing element is formed in a triangular shape. The detector may include a switching region configured to connect the first sensing 5 element and the second sensing element. There may also be provided a plurality of sections including a first section connecting a first plurality of sensing elements to a first output and a second section connecting a second plurality of sensing elements to a second output. The section may be provided in a hexagonal shape.

An electron microscope comprising: A specimen holder, for holding a specimen; An electron beam column, for producing an array of electron beams and concurrently irradiating an array of target areas of said specimen therewith; A scanning assembly, for producing relative scanning motion of said beam array with respect to the specimen; A detector, for detecting radiation emanating from the specimen in response to said irradiation,
wherein said detector is: A backscattered electron detector that can be disposed proximal to the specimen at a side thereof facing said electron beam column; Provided with an array of apertures that allow passage of said electron beams from said column to the specimen; Provided with a functionally sub-divided detection surface that enables segregated detection of a backscattered electron flux produced by each individual beam.

An embodiment of electron microscope system is described that comprises an electron column pole piece and a light guide assembly operatively coupled together. The light guide assembly also includes one or more detectors, and a mirror with a pressure limiting aperture through which an electron beam from an electron source passes. The mirror is also configured to reflect light, as well as to collect back scattered electrons and secondary electrons.

A charged particle assessment tool includes: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.

A device and method for detecting radiation comprising: a radiation-sensitive surface composed of an array of electrically inter-isolated radiation-sensitive elements (e.g. avalanche photodiode (APD), PIN diode, or scintillation sensor), each radiation-sensitive element is adapted to generate an electric current in response to absorbing radiation; an array of conversion circuits, each conversion circuit electrically coupled to a respective radiation-sensitive element and configured to generate an output signal indicative of the current generated by the radiation-sensitive element coupled thereto; and one or more summation arrangements, each summation arrangement coupled to a respective group of the conversion circuits, and configured to produce a summation result indicative of the radiation absorbed by respective group of the conversion circuits. The radiation-sensitive surface may be shaped as a dome-shape surface. The radiation-sensitive elements may be associated with radiation-sensitive planes such that all of the radiation-sensitive elements are directed toward a focal point on an inspected surface.

A sample may be inspected by making particles traverse the sample. The particles that have traversed the sample hit a detector one-by-one. In response thereto, the detector provides a sequence of respective detection outputs. The sequence of respective detection outputs is processed so as to identify respective locations where respective incident particles have hit the detector. An image is generated on the basis of the respective locations that have been identified. In order to determine a location where an incident particle has hit the detector, an evaluation is made with regard to pre-established respective associations between, on the one hand, respective locations where incident particles have hit the detector and, on the other hand, respective detection outputs.

Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.