Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

The present disclosure relates to transmission electron microscopy for evaluation of biological matter. According to an embodiment, the present disclosure further relates to an apparatus for determining the structure and/or elemental composition of a sample using 4D STEM, comprising a direct bombardment detector operating with global shutter readout, processing circuitry configured to acquire images of bright-field disks using either a contiguous array or non-contiguous array of detector pixel elements, correct distortions in the images, align each image of the images based on a centroid of the bright-field disk, calculate a radial profile of the images, normalize the radial profiles by a scaling factor, calculate the rotationally-averaged edge profile of the bright-field disk, and determine elemental composition within the specimen based on the characteristics of the edge profile of the bright-field disk corresponding to each specimen location.

The present disclosure relates to an apparatus and methods for generating a hybrid image by high-dynamic-range counting. In an embodiment, the apparatus includes a processing circuitry configured to acquire an image from a pixelated detector, obtain a sparsity map of the acquired image, the sparsity map indicating low-flux regions of the acquired image and high-flux regions of the acquired image, generate a low-flux image and a high-flux image based on the sparsity map, perform event analysis of the acquired image based on the low-flux image and the high-flux image, the event analysis including detecting, within the low-flux image, incident events by an event counting mode, multiply, by a normalization constant, resulting intensities of the high-flux image and the detected incident events of the low-flux image, and generate the hybrid image by merging the low-flux image and the high-flux image.

An electron sensor and a system with a plurality of electron sensors for electron microscopy using an electron microscope. More specifically, the electron microscope generates an electron beam that includes at least one electron that impacts on a lateral reception surface of said electron sensor and this generates an electrical charge of electron-hole (e-h) pairs that are detected and/or measured by at least electrodes linked to an electric circuit unit to form a high dynamic range image and measure the energy of the electrons impacting each pixel of the image.

A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

A detector may be provided with a sensing element or an array of sensing elements, each of the sensing elements may have a corresponding gain element. A substrate may be provided having a sensing element and a gain element integrated together. The gain element may include a section in which, along a direction perpendicular to an incidence direction of an electron beam, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity may be provided adjacent to the region of second conductivity. The sensing element may include a section in which, along the incidence direction, a region of fourth conductivity is provided adjacent to an intrinsic region of the substrate, and the region of second conductivity may be provided adjacent to the intrinsic region.

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

A detector, comprising: a semiconductor substrate which detects an incident electron beam; a supporting substrate which is thicker than the semiconductor substrate and which supports the semiconductor substrate; and an insulating film layer which is provided between the semiconductor substrate and the supporting substrate, wherein at least one charge suppression film which is not electrically connected to the semiconductor substrate is formed inside the insulating film layer.

Systems and methods for conducting charged particle beam modulation are disclosed. According to certain embodiments, a charged particle beam apparatus generates a plurality of charged particle beams. A modulator may be configured to receive the plurality of charged particle beams and generate a plurality of modulated charged particle beams. A detector may be configured to receive the plurality of modulated charged particle beams.

Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.