Patent classifications
H01J2237/2441
ELECTRON BEAM MICROSCOPE
An electron beam microscope includes an energy-sensitive detector to detect backscattered electrons and a signal processor for processing detection signals of the detector. The signal processor includes an analog amplifier. The signal processor also includes a window comparator having a signal input connected to an output of the analog amplifier. A signal generated at an output of the signal processor is generated based on a signal provided at an output the window comparator. The window comparator is configured to output a predetermined signal only if the amplified signal supplied to its signal input is less than or equal to an upper threshold and greater than or equal to a lower threshold.
Apparatus for high-speed imaging sensor data transfer
An imaging sensor assembly includes at least one substrate including a plurality of substrate signal lines. The imaging sensor assembly also includes at least one imaging sensor package disposed on the at least one substrate, the at least one imaging sensor package including at least one imaging sensor disposed on at least one imaging sensor package substrate. The imaging sensor assembly also includes at least one receiver package disposed on the at least one substrate, the receiver package including at least one receiver integrated circuit disposed on at least one receiver package substrate. The imaging sensor assembly also includes at least one electrical interconnect operably coupled to the at least one imaging sensor package and the at least one receiver package. A plurality of data signals are transmitted between the at least one imaging sensor package and the at least one receiver package via the at least one electrical interconnect.
Systems and methods for charged particle beam modulation
Systems and methods for conducting charged particle beam modulation are disclosed. According to certain embodiments, a charged particle beam apparatus generates a plurality of charged particle beams. A modulator may be configured to receive the plurality of charged particle beams and generate a plurality of modulated charged particle beams. A detector may be configured to receive the plurality of modulated charged particle beams.
Detection unit, scanning charged particle beam device and a method
A sensing unit includes a first set of sensors that comprises a first set of active areas that are surrounded by a first set of first non-active areas and a second set of sensors that comprises a second set of active areas that are surrounded by a second set of non-active areas. The first set of sensors and the second set of sensors are positioned at different heights, the first set of active areas and the second set of active areas do not overlap, and the first set of non-active areas and the second set of non-active areas partially overlap.
FAST FRAMING ELECTRON DETECTOR FOR 4D-STEM
A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with a front side facing incident radiation, and a back side opposite the front side. The sensor tile comprises a sensor material sensitive to the radiation. A front electrode is arranged on the front side of the sensor tile. A braking layer is arranged on the front electrode and at least partly covers the front electrode, for decelerating electrons in the incident radiation. A set of contacts of electrically conducting material is arranged on the back side of the sensor tile and in contact with the sensor material, thereby defining sensor pixels. At least one ASIC comprises a set of readout circuits in electrical connection with the contacts, each readout circuit being configured to process a signal received from the sensor pixel the readout circuit is electrically connected to. Each readout circuit of the set is configured to provide an output signal representative of the radiation incident in the corresponding sensor pixel.
Charged particle assessment tool, inspection method
A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.
SYSTEMS AND METHODS FOR CHARGED PARTICLE BEAM MODULATION
Systems and methods for conducting charged particle beam modulation are disclosed. According to certain embodiments, a charged particle beam apparatus generates a plurality of charged particle beams. A modulator may be configured to receive the plurality of charged particle beams and generate a plurality of modulated charged particle beams. A detector may be configured to receive the plurality of modulated charged particle beams.
ENERGY RAY DETECTOR, DETECTION APPARATUS, AND EQUIPMENT
A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.
ELECTRON BEAM DETECTION ELEMENT, ELECTRON MICROSCOPE, AND TRANSMISSION ELECTRON MICROSCOPE
An electron beam detection element according to an exemplary embodiment includes a plurality of unit cells. Each of the plurality of unit cells includes a diode of avalanche multiplication type and a plurality of memories. The diode of avalanche multiplication type is configured to detect an electron beam. The plurality of memories store signals of different frames respectively, each of the signals being output from the diode.
Quantitative secondary electron detection
Quantitative Secondary Electron Detection (QSED) using the array of solid state devices (SSD) based electron-counters enable critical dimension metrology measurements in materials such as semiconductors, nanomaterials, and biological samples (FIG. 3). Methods and devices effect a quantitative detection of secondary electrons with the array of solid state detectors comprising a number of solid state detectors. An array senses the number of secondary electrons with a plurality of solid state detectors, counting the number of secondary electrons with a time to digital converter circuit in counter mode.