A mask member is provided at an entrance opening of a mirror unit. Of a first diffraction grating and a second diffraction grating, when the second diffraction grating is used, the mask member masks preceding mirrors. With this process, aberration caused by reflective X-ray is suppressed. When the first diffraction grating is used, the mask member does not function. Alternatively, the mask member and another mask member may be selectively used.

A method for calibration including determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process. The method includes delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset. The method includes rotating the wafer over the pedestal by an angle. The method includes removing the wafer from the pedestal by the robot and measuring an exit offset. The method includes determining a magnitude and direction of the temperature induced offset using the entry offset and exit offset.

Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

A charged-particle detecting device 108, 108a, 108b, 108c, 108d, 108e, 108f, 108g or a radiation detecting device 203 detects charged particles or radiation as a detection target. These detection devices are each provided with: a scintillator 109 provided with a fluorescent layer 109a that converts the detection target into light 112; a light detector 111, 111b that detects the light 112 emitted from the scintillator 109; a light guide 110, 117 provided between the scintillator 109 and the light detector 111, 111b; and a blocking part 113, 114 that blocks a portion of the detection target incident on the scintillator 109 or the light emitted from the scintillator 109.

A method for operating a multi-beam particle beam microscope includes: scanning a multiplicity of particle beams over an object; directing electron beams emanating from impingement locations of the particle beams at the object onto an electron converter; detecting first signals generated by impinging electrons in the electron converter via a plurality of detection elements of a first detection system during a first time period; detecting second signals generated by impinging electrons in the electron converter via a plurality of detection elements of a second detection system during a second time period; and assigning to the impingement locations the signals which were detected via the detection elements of the first detection system during the first time period, for example on the basis of the detection signals which were detected via the detection elements of the second detection system during the second time period.

A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm.sup.2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source (101) for generating a primary electron beam; an electron optical system (102, 105, 112) configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen. The energy analyzing system includes: a Wien filter (108) configured to disperse the backscattered electrons; a detector (107) configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter (108); and an operation controller (150) configured to change an intensity of a quadrupole field of the Wien filter (108), while moving a detecting position of the detector (107) for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field.

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

A sample may be inspected by making particles traverse the sample. The particles that have traversed the sample hit a detector one-by-one. In response thereto, the detector provides a sequence of respective detection outputs. The sequence of respective detection outputs is processed so as to identify respective locations where respective incident particles have hit the detector. An image is generated on the basis of the respective locations that have been identified. In order to determine a location where an incident particle has hit the detector, an evaluation is made with regard to pre-established respective associations between, on the one hand, respective locations where incident particles have hit the detector and, on the other hand, respective detection outputs.