A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.

Apparatuses, systems, and methods for beam array geometry optimization of a multi-beam inspection tool are disclosed. In some embodiments, a microelectromechanical system (MEMS) may include a first row of apertures; a second row of apertures positioned below the first row of apertures; a third row of apertures positioned below the second row of apertures; and a fourth row of apertures positioned below the third row of apertures; wherein the first, second, third, and fourth rows are parallel to each other in a first direction; the first and third rows are offset from the second and fourth rows in a second direction that is perpendicular to the first direction; the first and third rows have a first length; the second and fourth rows have a second length; and the first length is longer than the second length in the second direction.

A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

A charged particle beam device includes: a stage 124 on which a sample 108 is to be placed; a charged particle optical system including a charged particle source 113 and an objective lens 121 that focuses a charged particle beam from the charged particle source onto the sample; and a detector 123 disposed between the objective lens and the stage and configured to detect electrons 109 emitted by an interaction between the charged particle beam and the sample. The stage, the charged particle optical system, and the detector are housed in a vacuum housing 112, and the detector includes a scintillator 107, a solid-state photomultiplier tube 104, and a light guide 106 provided between the scintillator and the solid-state photomultiplier tube, and an area of a light receiving surface of the scintillator is larger than an area of a light receiving surface of the solid-state photomultiplier tube.

The present invention provides an apparatus of charged-particle beam e.g. an electron microscope comprising a plasma generator for selectively cleaning BSE detector. In various embodiments, the plasma generator is located between a sample stage and a sample table having one or more openings or holes. The plasma generator generates plasma and distributes or dissipates the plasma through the openings of the sample table toward and onto surface of the BSE detector. Cleaning contaminants on the surface of the BSE detector frequently and selectively with in-situ generated plasma can prevent the detectors from performance deterioration such as losing resolution and contrast in imaging at high levels of magnification.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

The present invention relates to a scanning electron microscope configured to scan a workpiece, such as a wafer, mask, panel, or substrate, with an electron beam to generate an image of the workpiece. The scanning electron microscope includes a deflector (17, 18) configured to deflect the electron beam to scan a target region (T) on the workpiece (W) with the electron beam, and a deflection controller (22) configured to apply to the deflectors (17, 18) a scanning voltage that causes the electron beam to scan the target region (T) and an offset voltage that shifts the electron beam from an optical axial center (O) to the target region (T).

Some embodiments are related to a method of or apparatus for forming an image of a buried structure that includes: emitting primary charged particles from a source; receiving a plurality of secondary charged particles from a sample; and forming an image based on received secondary charged particles that have an energy within a first range.

Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.