It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.

A secondary electron probe is provided. The secondary electron probe comprises a porous carbon material layer. The porous carbon material layer consists of a plurality of carbon material particles and a plurality of micro gaps, the plurality of micro gaps are located between the plurality of carbon material particles. The porous carbon material layer is an electronic blackbody. A secondary electron detector and a scanning electron microscope probe using the secondary electron probe are also provided.

When adjusting optical axes of a multi-beam charged particle beam device, because parameters of optical systems are inter-dependent, the time required to adjust the parameters increases. Thus, the present invention provides a charged particle beam device provided with an optical parameter setting unit for setting parameters of optical systems for emitting a plurality of primary charged particle beams to a sample, detectors for individually detecting a plurality of secondary charged particle beams discharged from the sample, a plurality of memories for storing signals detected by the detectors and converted into digital pixels in the form of images, evaluation value derivation units for deriving evaluation values of the primary charged particle beams from the images, and a GUI capable of displaying the images and receiving an input from a user, wherein the GUI displays the images and evaluation results based on the evaluation values and changes various optical parameters in real-time.

The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.

Light which is radiant energy is emitted from a sample which is heated, and is detected by a backscattered electron detector. A detection signal from the backscattered electron detector includes a radiant component. A radiant component removal section extracts the radiant component from the detection signal using a filter, and then removes the radiant component from the detection signal. An optical detector which detects the radiant component may be provided. A divided detector may be provided as the backscattered electron detector.

A charged particle beam inspection apparatus includes a movable stage, configured to hold a substrate placed on the movable stage; a stage control circuit, configured to continuously move the movable stage in a direction opposite to a first direction; a deflection control circuit, configured to control a deflector to collectively deflect multiple beams to an N×N′ small region group including N small regions, the collective deflection includes performing tracking deflection of the multiple beams and collectively deflecting the multiple beams to a new group of N×N′ small regions and sequentially perform a first and a second step, a detector configured to detect secondary electrons emitted from the substrate due to irradiation of the substrate with the multiple beams, and combinations of a value of N and a value of M are set such that the greatest common divisor of the value of N and the value of M is 1.

An embodiment of electron microscope system is described that comprises an electron column pole piece and a light guide assembly operatively coupled together. The light guide assembly also includes one or more detectors, and a mirror with a pressure limiting aperture through which an electron beam from an electron source passes. The mirror is also configured to reflect light, as well as to collect back scattered electrons and secondary electrons.

An electron beam additive manufacturing system includes an electron beam source, an x-ray detection sensor configured to generate a waveform corresponding to an amount of x-rays detected by the x-ray detection sensor, and an electronic control unit comprising a processor and a non-transitory computer-readable memory, the electronic control unit communicatively coupled to the electron beam source and the x-ray detection sensor. The electronic control unit is configured to cause the electron beam source to emit an electron beam such that the electron beam impinges a verification plate, receive the waveform generated by the x-ray detection sensor in response to the x-ray detection sensor capturing x-rays emitted from the impingement of the electron beam with the verification plate, and determine a melt performance of a surface material of the verification plate based on the waveform.

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device.

An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).