In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.

The disclosure relates to a device for detecting therapeutic radiation based on an optical disk with solar cells. The radiation detecting device may include at least one optical disk formed of a water-equivalent material, disposed perpendicular to a first direction in which the radiation is incident, and converting the radiation into visible light; a solar cell disposed on one side of the at least one optical disk, converting the visible light into an electrical signal; and a processing module for collecting and processing the electrical signal outputted from the solar cell.

The present invention is directed towards an apparatus and method to detect electromagnetic radiation or signals emitted by plasma comprising a sensor unit, the sensing unit comprising a first sensor for detecting electromagnetic radiation or signals; an electromagnetic barrier wherein the electromagnetic barrier is configured to surround the first sensor to prevent ambient electromagnetic radiation reaching the first sensor; a first port through which electromagnetic radiation can pass, the port configured for coupling to a port of a plasma chamber such that electromagnetic radiation or signals emitted from the plasma can reach the first sensor; and a first output coupled with a balun and a dual coaxial system whereby a signal sensed is grounded and a phase reversed version of the signal is grounded. A signal acquisition system (SAS) for detecting electromagnetic radiation emitted by a plasma is also described.

An apparatus, system, and method for real-time dosimetry. An electron beam irradiation system includes one or more detectors. The detectors have coils that, when an electron travels by a sensor pad in the detector, the electron induces a current into the coils. The current is detected and the electron is counted. The number of electrons counted at the one or more detectors is compared to the number of electrons leaving an electron gun, giving a dosage of the workpiece being irradiated.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

An apparatus, system, and method for real-time dosimetry. An electron beam irradiation system includes one or more detectors. The detectors have coils that, when an electron travels by a sensor pad in the detector, the electron induces a current into the coils. The current is detected and the electron is counted. The number of electrons counted at the one or more detectors is compared to the number of electrons leaving an electron gun, giving a dosage of the workpiece being irradiated.

An apparatus, system, and method for real-time dosimetry. An electron beam irradiation system includes one or more detectors. The detectors have coils that, when an electron travels by a sensor pad in the detector, the electron induces a current into the coils. The current is detected and the electron is counted. The number of electrons counted at the one or more detectors is compared to the number of electrons leaving an electron gun, giving a dosage of the workpiece being irradiated.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.