A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.

Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0 C. or less.

An optical pyrometer having a coaxial light guide delivers laser radiation through optics to heat a localized area on a sample, and simultaneously collects optical radiation from the sample to perform temperature measurement of the heated area. Inner and outer light guides can comprise the core and inner cladding, respectively, of a double-clad fiber (DCF), or can be formed using a combination of optical fibers in one or more coaxial bundles. Coaxial construction and shared optics facilitate alignment of the centers of the heated and observed areas on the sample. The heated area can be on the order of micrometers when using a single-mode optical fiber core as the inner light guide. The system can be configured to heat small samples within a vacuum system of charged-particle beam microscopes such as electron microscopes. A method for using the invention in a microscope is also provided.

A Fast Faraday cup includes a group of electrodes including a ground electrode having a through hole and a collector electrode configured with a blind hole that functions a collector hole. The electrodes are configured to allow a beam (e.g., a non-relativistic beam) to fall onto the ground electrode so that the through hole cuts a beamlet that flies into the collector hole and facilitates measurement of the longitudinal distribution of particle charge density in the beam. The diameters, depths, spacing and alignment of the collector hole and the through hole are controllable to enable the Fast Faraday day cup to operate with a fast response time (e.g., fine time resolution) and capture secondary particles.

Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O.sub.2 gas and CH.sub.3F gas, or CH.sub.2F.sub.2 gas.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

A detection device includes a substrate on which a connector connected to a transmission line for microwaves, a detection circuit configured to convert the microwaves inputted from the transmission line via the connector to a detection value indicating power of the microwaves, and an output port configured to output the detection value obtained by the detection circuit are disposed. The detection device further includes a housing that has a first opening and a second opening and accommodates the substrate in a state where the connector is inserted into the first opening and the output port is inserted into the second opening. The detection device further includes a first sealing member provided at the first opening of the housing to seal a periphery of the connector; and a second sealing member provided at the second opening of the housing to seal a periphery of the output port.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

A method and apparatus for obtaining at least one normalized baseline spectrum for a processing volume of a processing chamber; calculating a distribution value of the normalized baseline spectrum; obtaining a plurality of normalized cleaning process spectrums; calculating a distribution function of the plurality of normalized cleaning process spectrums; comparing the distribution value to the distribution function; and determining an end point by identifying when the distribution function approaches the distribution value. A method includes: initiating a cleaning process in a processing chamber, flowing a cleaning gas into a processing volume of the processing chamber; obtaining a normalized baseline spectrum; measuring a plurality of intensity spectrums; calculate a plurality of normalized cleaning process spectrums; comparing a distribution value of the normalized baseline spectrum to a distribution function of the plurality of normalized cleaning process spectrums; and determining an end point by identifying when the distribution function approaches the distribution value.