A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM).

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, an electron beam inspection system includes multiple stages or multiple chambers, where the chambers/stages (N2) are organized to form one or more paths for wafer/mask inspection. An inspection procedure in each chamber (or at each stage) is determined by its order in the path and the relative columns used. For a system with N chambers/stages, a maximum number of N wafers/masks can be processed simultaneously.

A method for filtering matter waves (MW) from a composite particle beam, comprising: obtaining the composite particle beam from a first particle path, the beam comprising a matter-wave-energy (an MWE) particle component and a matter wave (an MW) component, wherein the MW component does not correspond to the MWE particle component; directing the composite particle beam toward a unit having a distribution of a non-uniform spatial field; tilting the MWE particle component of the composite particle beam toward a second path away from the first path; generating an output beam of the MW component along the first path going through the non-uniform spatial field; and receiving the output beam of the MW component for processing in a subsequent step.

A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM).

A non-invasive measuring/diagnosis/treatment apparatus and method includes an MWE particle source for emitting particles, the particles comprises a first particle beam and a second particle beam with enclosed space at a partial vacuum and low humidity environment. A first beam splitter for making MW of a first particle beam and MWE of a second particle beam toward a first path, and making MW of the second particle beam and MWE of the first particle beam toward a second path. An MW filter having a distribution of a non-uniform spatial field located at the first path for tilting the MWE of the second particle beam and let the MW of the first particle beam transmit a sample located on the first path and a first detector for detecting a plurality of peaks or valleys of the first interference pattern.

An electrostatic wafer clamping and sensing system includes a power source configured to provide a high voltage clamping signal. A transformer, having a primary and a secondary, is coupled in series with an output of the power source. An AC voltage source is coupled to the primary of the transformer and operates at a frequency within the bandpass of a filter of a plasma processing chamber. A voltage sensing circuit is coupled to an opposing end of the primary of the transformer, the two ends being separated by a center tap. The high voltage clamping signal and a capacitance sensing AC signal from the AC voltage source are combined via the secondary and passed to a capacitive load. While the AC voltage source is held constant, amplitude modulation at the voltage sensing circuit indicates a clamping state of an electrostatic chuck.

A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.