Methods and systems for implementing laser-based phase plate image contrast enhancement are disclosed herein. An example method at least includes forming at least one optical peak in a diffraction plane of an electron microscope, and directing an electron beam through the at least one optical peak at a first location, where the first location determines an amount of phase manipulation the optical peak imparts to an electron of the electron beam.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

A method of operating a charged particle beam device is disclosed, including focusing a charged particle beam onto a sample with an objective lens assembly; passing a reflected light beam through a bore of the objective lens assembly to an interferometer; and interferometrically determining a z-position of the sample with the interferometer. A charged particle beam device is disclosed, including a charged particle beam generator which has a charged particle source. A charged particle path for the charged particle beam extends through a bore of an objective lens assembly toward a sample stage. An interferometer is arranged to receive a reflected light beam which passes through the bore of the objective lens assembly.

Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber configured to secure a substrate, and a plasma source above the pedestal. In an embodiment, a laser source is coupled to the chamber, and a detector is coupled to the chamber across from the laser source. In an embodiment, the detector is configured to be optically coupled to the laser source.

The density difference of particle beam irradiation with two optical statuses is produced utilizing a diffraction effect, within the same field of vision, such that a diffraction grating manufactured with a material which passes through a particle beam is provided on the upper side of a specimen and on the lower side of the irradiation optical system. Further, a region wider than the opening region of the diffraction grating is irradiated with the particle beam to produce the density difference of the particle beam emitted to the specimen, by superposing the particle beam, Bragg-diffracted with the opening region, and the particle beam, transmitted through the outer peripheral part of the opening region without being diffracted, with each other, and emitting the beam to the specimen.

The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light. Since the spatial distribution of phase of the light can be modulated as intended by a spatial phase modulation technique for light, it is possible to generate an electron wave having a spatial distribution of phase modulated as intended.

Provided is a mirror device including a mirror which is supported to be flappable around a fast axis and supported to be flappable around a slow axis and in which a resonance frequency of flapping thereof with respect to the fast axis is a first value and a resonance frequency of the flapping thereof with respect to the slow axis is a second value lower than the first value; a signal extracting portion configured to obtain from a slow axis coil a synthesized signal including an induced signal generated in the slow axis coil due to an operation of flapping the mirror around the fast axis and configured to extract the induced signal from the synthesized signal; and a signal generating portion configured to generates a driving signal so that the flapping of the mirror with respect to the fast axis is in a resonance state according to the induced signal.

A scanning electron microscope includes a first detector for detecting electrons, a second detector for detecting X-rays, and an image processor section for causing first markers indicative of imaging positions and second markers indicative of analysis positions to be displayed on a display device such that the first and second markers are placed on a whole image of a sample. The image processor section alters the magnification of the whole image based on instructions for altering the magnification of the whole image displayed on the display device. The image processor section displays new first markers of the same size as the first markers placed on the unaltered magnification whole image such that the new first markers are placed on the altered magnification whole image. The image processor section causes new second markers of the same size as the second markers placed on the unaltered magnification whole image to be placed on the altered magnification whole image.

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.