Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.

A reference image is generated based on an illumination condition and element information of a specimen. The reference image includes a figure indicating a characteristic X-ray generation range, a numerical value indicating a characteristic X-ray generation depth, or the like. The reference image changes with a change of an accelerating voltage, a tilt angle, or an element forming the specimen. The reference image may include a figure indicating a landing electron scattering range, a figure indicating a back-scattered electron generation range, or the like.

A UI image includes a reference image, which includes a background image and a schematic image. The background image corresponds to a cross section of a specimen having a multilayer structure. The schematic image includes a figure indicating an electron penetration depth, a figure indicating a characteristic X-ray generation depth, and a figure indicating a back-scattered electron generation depth. These figures are displayed in an overlapping manner or in parallel to each other.

An average mass, an average density, and an average atomic number for a plurality of elements which form a specimen are calculated. A characteristic X-ray generation depth is calculated based on the average values and a minimum excitation energy of an element of interest. When an illumination condition is set, a reference image including a figure indicating a characteristic X-ray generation range, a numerical value indicating the characteristic X-ray generation depth, or the like, is displayed.

A GUI (graphical user interface) image includes an input portion and a reference image. The reference image includes a plan diagram and numerical value information. The plan diagram includes a figure indicating an electron penetration range, a figure indicating a characteristic X-ray generation range, and a figure indicating a back-scattered electron generation range. The numerical value information includes numerical values indicating sizes of these ranges.

A charged particle beam apparatus that includes a magnetic lens having an electromagnetic coil composed of a pair of coils includes: a setting unit that sets a maximum current value that defines a maximum magnetomotive force of the magnetic lens based on an operation of a user; and a current control unit that controls a current to be supplied to each of the pair of coils within a current range corresponding to a set maximum current value so that thermal power consumed by the electromagnetic coil is maintained constant at thermal power corresponding to the set maximum current value.

Some embodiments include a high voltage waveform generator comprising: a generator inductor; a high voltage nanosecond pulser having one or more solid state switches electrically and/or inductively coupled with the generator inductor, the high voltage nanosecond pulser configured to produce a pulse burst having a burst period, the pulse burst comprising a plurality of pulses having different pulse widths; and a load electrically and/or inductively coupled with the high voltage nanosecond pulser, the generator inductor, and the generator capacitor, the voltage across the load having an output pulse with a pulse width substantially equal to the burst period and the voltage across the load varying in a manner that is substantially proportional with the pulse widths of the plurality of pulses.

Some embodiments include a high voltage waveform generator comprising: a generator inductor; a high voltage nanosecond pulser having one or more solid state switches electrically and/or inductively coupled with the generator inductor, the high voltage nanosecond pulser configured to produce a pulse burst having a burst period, the pulse burst comprising a plurality of pulses having different pulse widths; and a load electrically and/or inductively coupled with the high voltage nanosecond pulser, the generator inductor, and the generator capacitor, the voltage across the load having an output pulse with a pulse width substantially equal to the burst period and the voltage across the load varying in a manner that is substantially proportional with the pulse widths of the plurality of pulses.

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

To assist an operator in setting an observation conditions, so as to acquire an image with a desired image quality (such as contrast) in a charged particle beam device without falling into trial and error based on the experience of the operator. Therefore, the charged particle beam device includes a stage 115 on which a sample is placed, a charged particle optical system configured to irradiate the sample with a charged particle beam, detectors 121 and 122 configured to detect an electron generated by an interaction between the charged particle beam and the sample, a control unit 103 configured to control the stage and the charged particle optical system according to an observation condition set by the operator and configured to form an image based on a detection signal from the detectors, and a display 104 configured to display an observation assist screen for setting the observation condition. The control unit displays, on the observation assist screen 401, information 510 related to an irradiation electron amount per pixel irradiated onto the sample by the charged particle optical system under the observation condition.