Patent classifications
H01J2237/28
MULTI-BEAM CHARGED PARTICLE COLUMN
Disclosed herein is a multi-beam charged particle column configured to project a multi-beam of charged particles towards a target, the multi-beam charged particle column comprising at least one aperture array comprising at least two different aperture patterns; and a rotator configured to rotate the aperture array between the different aperture patterns.
ALIGNMENT DETERMINATION METHOD AND COMPUTER PROGRAM
The present invention concerns a method of determining alignment of electron optical components in a charged particle apparatus. The charged particle apparatus comprising: an aperture array and a detector configured to detect charged particles corresponding to beamlets that pass through the corresponding apertures in the aperture array. The method comprises: scanning each beamlet in a plane of the aperture array over a portion of the aperture array in which a corresponding aperture of the aperture array is defined so that charged particles of each beamlet may pass through the corresponding aperture; detecting during the scan any charged particles corresponding to each beamlet that passes through the corresponding aperture; generating a detection pixel for each beamlet based on the detection of charged particles corresponding to each beamlet at intervals of the scan; and collecting information comprised in the detection pixel such as the intensity of charged particles.
Navigation for electron microscopy
A method and system for analyzing a specimen in a microscope are disclosed. The method comprises: acquiring a series of compound image frames using a first detector and a second detector, different from the first detector, wherein acquiring a compound image frame comprises: causing a charged particle beam to impinge upon a plurality of locations within a region of a specimen, the region corresponding to a configured field of view of the microscope, the microscope being configured with a set of microscope conditions, monitoring, in accordance with the configured microscope conditions, a first set of resulting particles generated within the specimen at the plurality of locations using the first detector so as to obtain a first image frame, monitoring, in accordance with the configured microscope conditions, a second set of resulting particles generated within the specimen at the plurality of locations using the second detector, so as to obtain a second image frame, wherein each image frame comprises a plurality of pixels corresponding to, and derived from the monitored particles generated at, the plurality of locations within the region, for each pixel of the second image frame, if the configured microscope conditions are the same as those for a stored second image frame of an immediately preceding acquired compound frame in the series, and if the respective pixel corresponds to a location within the region to which a stored pixel comprised by said stored second image frame corresponds, combining said stored pixel with the pixel so as to increase the signal-to-noise ratio for the pixel, and combining the first image frame and second image frame so as to produce the compound image frame, such that the compound image frame provides data derived from, for each of the plurality of pixels, the particles generated at the corresponding location within the region and monitored by each of the first detector and second detector; and displaying the series of compound image frames in real-time on a visual display.
Pattern sensing device and semiconductor sensing system
An object of the invention is to provide a pattern measuring device for generating appropriate reference pattern data while suppressing an increase in the manufacturing cost that would occur when manufacturing conditions are finely changed. A pattern measuring device has an arithmetic processing unit for measuring a pattern formed on a sample. The arithmetic processing unit, on the basis of signals obtained with a charged particle beam device, acquires or generates image data or contour line data on a plurality of circuit patterns created under different manufacturing conditions of a manufacturing apparatus, and generates reference data to be used for measurement of a circuit pattern from the image data or contour line data.
Inspection of regions of interest using an electron beam system
A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.
Charged Particle Beam Device and Sample Observation Method
A dielectric microscopic observation is possible, which suppresses image flow regardless of scanning speed. There are provided a sample chamber 120 holding a sample 200 between a first insulating layer 121 on which a conductive layer 211 to be irradiated with a charged particle beam is laminated and a second insulating layer 122, an amplifier 141 that amplifies a potential change that occurs at an interface between the first insulating layer and the sample as the conductive layer is irradiated with the charged particle beam, and outputs the amplified result as a measurement signal, a main control unit 142 that converts the measurement signal from the amplifier into image data, and corrects the image data with a deconvolution filter 302 to generate corrected image data, a display unit 144 including an observation image display unit 501 and a filter adjustment unit 502 that displays setting information of the deconvolution filter, and an information processing device that displays the corrected image data on the observation image display unit, and when the setting information of the deconvolution filter displayed in the filter adjustment unit is changed, adjusts the deconvolution filter according to the changed setting information.
SCINTILLATOR AND CHARGED PARTICLE RADIATION APPARATUS
The present invention provides: a scintillator which is reduced in the intensity of the afterglow, while having increased luminous intensity; and a charged particle radiation apparatus. A scintillator according to the present invention is characterized in that: a base material, a buffer layer, a light emitting part and a first conductive layer are sequentially stacked in this order; the light emitting part contains one or more elements that are selected from the group consisting of Ga, Zn, In, Al, Cd, Mg, Ca and Sr; and a second conductive layer is provided between the base material and the light emitting part.
IMAGE PROCESSING SYSTEM AND METHOD OF PROCESSING IMAGES
The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.
COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF
The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.
TESTING ASSEMBLY INCLUDING A MULTIPLE DEGREE OF FREEDOM STAGE
A multiple degree of freedom sample stage or testing assembly including a multiple degree of freedom sample stage. The multiple degree of freedom sample stage includes a plurality of stages including linear, and one or more of rotation or tilt stages configured to position a sample in a plurality of orientations for access or observation by multiple instruments in a clustered volume that confines movement of the multiple degree of freedom sample stage. The multiple degree of freedom sample stage includes one or more clamping assemblies to statically hold the sample in place throughout observation and with the application of force to the sample, for instance by a mechanical testing instrument. Further, the multiple degree of freedom sample stage includes one or more cross roller bearing assemblies that substantially eliminate mechanical tolerance between elements of one or more stages in directions orthogonal to a moving axis of the respective stages.