H01J2237/303

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS
20170084419 · 2017-03-23 ·

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

UNIDIRECTIONAL METAL ON LAYER WITH EBEAM
20170077029 · 2017-03-16 ·

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.

EBEAM STAGGERED BEAM APERTURE ARRAY
20170076906 · 2017-03-16 ·

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

EBEAM THREE BEAM APERTURE ARRAY
20170076905 · 2017-03-16 ·

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

DATA COMPRESSION FOR EBEAM THROUGHPUT

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of data compression or data reduction for e-beam tool simplification involves providing an amount of data to write a column field and to adjust the column field for field edge placement error on a wafer, wherein the amount of data is limited to data for patterning approximately 10% or less of the column field. The method also involves performing e-beam writing on the wafer using the amount of data.

EBEAM NON-UNIVERSAL CUTTER

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

Textiles and methods and systems for producing textiles
09587349 · 2017-03-07 · ·

Textiles are provided that include fibrous cellulosic materials having an -cellulose content of less than about 93%, the fibrous materials being spun, woven, knitted, or entangled. The fibrous cellulosic materials can be irradiated with a dose of ionizing radiation that is sufficient to increase the molecular weight of the cellulosic materials without causing significant depolymerization of the cellulosic materials. Methods of treating textiles that include irradiating the textiles are also provided.

Method and apparatus for a high resolution imaging system
09558915 · 2017-01-31 ·

The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed.

SYSTEM AND METHOD FOR MANAGING SOLID PHASE PRECURSORS FOR AN ION IMPLANTATION SYSTEM
20250253125 · 2025-08-07 ·

A filter is configured to impede a flow of vapor from a vaporizer to an arc chamber in an ion implantation system. The flow is impeded to such a degree that the vaporizer must be operated at a higher temperature to match the flow rate that would result without the filter. Increasing the vaporizer temperature at which the vaporizer supplies the arc chamber with an operative flow rate of a vapor of an ion source material contained in the vaporizer prevents entry to the arc chamber of ion source material that is inadvertently vaporized by waste heat from the arc chamber while another species is being implanted. The filter may have a temperature-dependent permeability so as to provide a sharp transition between a temperature range at which the vapor flow is effectively cut off and a temperature range at which the vapor flow is at an operative rate.

OUTPUT WINDOW UNIT
20260045446 · 2026-02-12 · ·

An output window unit includes a window foil that transmits an electron beam toward an outside of a housing; and a support member fixed to the housing and supporting the window foil. The support member includes a mesh portion which faces the window foil and in which a plurality of through-holes through which the electron beam from an electron source passes toward a window foil side are formed, a frame portion having a solid shape and formed integrally with the mesh portion to surround the mesh portion when viewed in a first direction that is a direction in which the window foil and the mesh portion face each other, an outer portion located outside the mesh portion and the frame portion when viewed in the first direction, and formed integrally with the mesh portion and the frame portion, and a recess formed to be recessed along the first direction.