A spatially selective surface functionalization device configured to generate a pattern of micro plasmas and functionalize a substrate surface may include: a pattern management system, a patterning head, and a gas delivery system, wherein the gas delivery system provides a primed gas mixture for forming a plasma between the patterning head and a target substrate below the patterning head. A patterning head may generate a distribution of micro plasmas from individual directed beams of electrons with spatial separation. A pattern management system may store and manipulate information about a pattern of surface functionalization and generate instructions for regulating a distribution of micro plasmas that functionalize a substrate surface.

A pulsing assembly for delivering power to a plasma reactor having a first load between a first plasma reactor input port and a plasma reactor common port and having a second load between a second plasma reactor input port and the plasma reactor common port. The pulsing assembly includes a first pulsing unit, a second pulsing unit and an energy storage component connected therebetween. The first pulsing unit includes a first input port connectable to a power source, a pulsing assembly common port connectable to the plasma reactor common port, a first output port connectable to the first load of the plasma reactor for supplying pulses between the first output port and the pulsing assembly common port. The second pulsing unit includes a second input port connectable to a power source and a second output port connectable to the second load of the plasma reactor.

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.

According to the hydrogen peroxide plasma ionization generator device having a double-jet nozzle suggested by the present invention, the double jet nozzle forming an air passage is configured to construct the hydrogen peroxide plasma ionization generator device such that the hydrogen peroxide and ion particles are sprayed finer than that of a conventional single-jet nozzle.

The invention relates to the production of wear-resistant layers which are exposed to friction wear on surfaces of components of internal combustion engines. In the process, wear-resistant layers are formed on the respective surface by electric arc discharge under vacuum conditions. The wear-resistant layers are formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized carbon and have a microhardness of at least 3500 HV and an arithmetical mean roughness value Ra of 0.1 μm without a mechanical, physical and/or chemical surface processing taking place.

Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

A plasma processing apparatus includes a processing container including an opening provided in a ceiling wall of the processing container, and a microwave radiation source. The microwave radiation source includes a slot antenna including a slot and configured to radiate microwaves from the slot, and a transmission window configured to close the opening and to radiate the microwaves from the slot into the processing container. The transmission window includes a first surface including a skirt which suspends to cover a side wall of the opening, and a second surface which is an opposite surface to the first surface and faces the slot antenna with a gap between the slot antenna and the second surface.

There is provided a plasma processing apparatus comprising: a chamber; a lower electrode provided in the chamber and included in a substrate support; an upper electrode provided in the chamber and disposed to face the lower electrode; a gas supply configured to supply a processing gas; a high-frequency power supply electrically connected to the upper electrode and configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode; a first meter configured to measure a potential waveform of the upper electrode; a second meter configured to measure a potential waveform of the lower electrode; a detector configured to detect a voltage waveform; an impedance adjusting device configured to adjust an impedance of the lower electrode; and a controller configured to control the impedance adjusting device to adjust the impedance of the lower electrode based on the voltage waveform detected by the detector.

A baffle plate assembly including a baffle plate, a ring and support members. The baffle plate has an outer diameter and configured to distribute gases through a showerhead of a showerhead assembly of a substrate processing system. The gases are received from a stem of the showerhead assembly. The ring has an inner diameter and configured to be disposed in a ring channel of the showerhead assembly. The inner diameter is greater than the outer diameter of the baffle plate. The support members extend from the baffle plate to the ring. The ring and the support members hold the baffle plate in a position between a top plate and a bottom plate of the showerhead.