Examples of a substrate processing apparatus include a signal transmitter that outputs a command signal, and an RF generator that receives the command signal, starts to output traveling wave power simultaneously with a first transition of the command signal, measures a delay time, which is a time period after the first transition of the command signal until a predetermined power-applied state is achieved on a receiving side of the traveling wave power, and stops outputting the traveling wave power when the delay time elapses after a second transition of the command signal.

An optical fiber coating stripper includes a pair of electrodes, each of which having a discharge head portion and an electrode portion, and a gliding plasma (GP) head housing the electrodes therein. The GP head includes internal airflow channels. The pair of electrodes are disposed at a front end of the GP head and form an air gap therebetween. Each of the discharge head portion includes a curved portion with a rib-shaped protrusion extending in a longitudinal direction of the discharge head portion. In operation, the electrodes are connected to non-alternating electrically positive and negative polarities. When a gas flows through the internal airflow channels in a direction a back end of the GP head toward the front end, a tongue-shaped GP flow is formed in the air gap between the rib-shaped protrusions of the discharge head portions.

A plasma source includes a chamber in which plasma is generated, a cathode provided in the chamber that emits electrons into the chamber, and an electromagnet provided around the chamber. The electromagnet includes a coil and magnetic flux passing members that cause a magnetic flux generated by energization of the coil to reach the inside of the chamber. A usage mode of one or more of the magnetic flux passing members is changeable.

The invention provides a gas barrier film with low deterioration in the gas barrier property before and after high-temperature hot water treatment. The gas barrier film has a gas barrier coating film, formed as a composite film comprising a network structure having a mesh structure with SiOSi bonds as the basic lattice and a water-soluble polymer crystallized as microcrystals, incorporated into the mesh of the network structure, wherein a barrier coating agent, obtained by mixing a condensate solution of an alkoxysilane hydrolysate prepared as a mixed solution in which the proportion of bonded states of the silicon atoms of the condensate with Q1 and Q2 structures is at least 60% of the total silicon atoms, with a crystalline water-soluble polymer, is coated on a base material film, either after forming or without forming an aluminum oxide vapor deposition film, to form a coating layer.

A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

The device for treating an object with plasma comprises a jacket apparatus (10) which forms, or can form, a substantially gas-tight holding chamber (15) in which an object (1) to be treated can be accommodated. The device comprises a first electrode (20) and a second electrode (21), wherein the two electrodes (20, 21) are arranged with reference to the jacket apparatus (10) such that a plasma (2) can be generated in the holding chamber (15) of the jacket apparatus (10). A wall (13) of the jacket apparatus (10) forming the holding chamber (15) of the jacket apparatus (10) has a modulus of elasticity of Ew<10 kN/mm.sup.2, at least in sections. The device comprises a housing (30), by means of which a housing interior (33) is or can be formed, wherein the jacket apparatus (10) is arranged within the interior of the housing (33).

This technique provides a protein film production method which can form a protein film, with denaturation of protein being prevented. The protein film production method includes mixing a protein with an aqueous solvent, to thereby form an aqueous protein solution PAS1, and treating the aqueous protein solution PAS1 with plasma generated by a plasma generator 100. The plasma generated by the plasma generator 100 has a plasma density of 110.sup.13 cm.sup.3 to 110.sup.15 cm.sup.3.

The invention provides a gas barrier film with low deterioration in the gas barrier property before and after high-temperature hot water treatment. The gas barrier film has a gas barrier coating film, formed as a composite film comprising a network structure having a mesh structure with SiOSi bonds as the basic lattice and a water-soluble polymer crystallized as microcrystals, incorporated into the mesh of the network structure, wherein a barrier coating agent, obtained by mixing a condensate solution of an alkoxysilane hydrolysate prepared as a mixed solution in which the proportion of bonded states of the silicon atoms of the condensate with Q1 and Q2 structures is at least 60% of the total silicon atoms, with a crystalline water-soluble polymer, is coated on a base material film, either after forming or without forming an aluminum oxide vapor deposition film, to form a coating layer.

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may include a top surface and side surfaces. The gas splitter may define a first and second gas inlets, with each gas inlet extending through one side surface. The gas splitter may define first and second gas outlets extending through the top surface. The gas splitter may define first and second gas lumens that extend between and fluidly couple each gas inlet with corresponding gas outlets. The gas splitter may define mixing channels that include a mixing outlet extending through a side surface and a mixing inlet extending through the top surface. The systems may include output manifolds seated on the lid plate. The systems may include output weldments that fluidly couple each mixing outlet with a respective one of the output manifolds.

A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.