A emitter is formed of a thin-film membrane disposed within a cavity so as to provide a output beam. The emitter may be configured to obtain broadband light. The emitter may enhance the emissivity of light over a broad spectral band.

A base is metal, ceramic, or a complex combining thereof, and has thereon multiple concave-convex patterns that are provided at one or more pitches equal to or less than 2 m, and a surface part 1a of the base 1 is porous.

An infrared heater includes a heater body and a casing. The heater body includes a heating element and a metamaterial structure capable of emitting infrared radiation having a peak wavelength of a non-Planck distribution when thermal energy is supplied from the heating element. The casing has an interior space in which the heater body is disposed and whose pressure is reducible. In addition, the casing includes an infrared radiation transmitting portion capable of transmitting the infrared radiation emitted by the metamaterial structure to an outside of the casing.

A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, such that the emitter layer structure emits light. The emitter layer structure is electrically insulated from the inductive structure.

A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.

A emitter is formed of a thin-film membrane disposed within a cavity so as to provide a output beam. The emitter may be configured to obtain broadband light. The emitter may enhance the emissivity of light over a broad spectral band.

A base is metal, ceramic, or a complex combining thereof, and has thereon multiple concave-convex patterns that are provided at one or more pitches equal to or less than 2 m, and a surface part 1a of the base 1 is porous.

An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

The disclosure concerns an infrared emitter is provided comprising a metalized membrane emitting infrared light in operation. The membrane comprises a two dimensional array of infrared wavelength sized through-holes and to each side a thin metal layer comprising also an array of through-holes. The through-holes are arranged as a two-dimensional periodic array and each of said through-holes have a cross section having a maximum and a minimum dimension of less than any wavelength of the emitted infrared light. The peak wavelength of the emitted infrared light is proportional to the periodicity of the through-holes. At least one of the metal layers is connected to an electrical current source that provides an electrical current that heats at least one of the metal layers so that a narrow bandwidth and highly directive light beam of infrared light is emitted. The membrane is arranged on a membrane support and both are made of a material that resists to temperatures higher than 400.