Disclosed is a filament support and a lamp with the filament support. The filament support may include a main rod, a plurality of branch rods and a plurality of support members. The plurality of branch rods are all installed on the main rod; the support members are arranged at ends of at least some of the branch rods, both ends of the support member are curved or bent towards a same side, resulting in that the support member surrounds to form a penetrating zone, and an opening for communicating the penetrating zone is formed between both ends of the support member. Both ends of the support member are curved or bent towards a same side, resulting in that the support member surrounds to form a penetrating zone, and an opening for communicating the penetrating zone is formed between both ends of the support member.

An infrared light source includes an emitting element extending as a radial plane about the emitting element's center and configured to heat up to emit infrared light. The emitting element lies in a cavity bounded by a cover, placed facing the emitting element. The cover has internal and external faces, the internal face facing the emitting element, and the external face defining an interface between the cover and a medium outside the light source. The cover occupies, parallel to a transverse axis perpendicular to the radial plane, a thickness, between the internal and external faces. The external face includes a planar central portion and at least one peripheral portion adjacent and inclined respective to the central portion. The planar central portion extends about the external face's center. In the peripheral portion, the cover's thickness decreases as a function of a distance from the central portion.

An image pickup unit includes: a printed wiring board provided with an image pickup element and having a first electrode on a surface layer; a flexible wiring substrate having a base member having first and second faces, a conductive layer provided on the first face, and an insulating layer provided on the conductive layer, wherein the conductive layer has a second electrode in which the insulating layer is not provided to one longitudinal end part; a conductive connection member that connects the first electrode to the second electrode; and a reinforcement member provided on the base member on the second face side, wherein the reinforcement member continuously covers an end part of the insulating layer on a side closer to the second electrode and an end part of the conductive connection member on a side closer to the insulating layer of a portion connected to the second electrode.

A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.

A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.

Provided is a radiation light source that enables adjustment of infrared radiation to a significantly narrow band. A plasmonic reflector layer consisting of a plasmonic material, a resonator layer consisting of an insulator, and a partially reflecting layer are alternately laminated in this order to form a multi-layered radiation light source, wherein the partially reflecting layer are selected from any one of a free interface, an ultrathin-film metallic layer, and a distributed reflector layer having a structure in which layers having different refractive indexes are alternately laminated. When a material with high-temperature resistance such as SiC is used in the outermost layer of the distributed reflector layer, the multi-layered radiation light source can operate at high temperatures of 550° C. and higher.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the banks includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the banks includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the banks has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the banks includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the banks includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the banks has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the arrays includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the arrays includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the arrays has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the arrays includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the arrays includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the arrays has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.