A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

The present disclosure provides a substrate bonding apparatus capable of temperature monitoring and temperature control. The substrate bonding apparatus comprises a fluid cooling module and a sensor module for detecting temperatures at multiple zones (e.g., two or more zones) within a substrate. The substrate bonding apparatus according to the present disclosure achieves temperature stabilization within the substrate. The substrate bonding apparatus further improves bonding process performance by reducing distortion residual, reducing bubbles on edges of the substrate, and reducing non-bonded area within the substrate.

A tonneau system for use with a pickup truck. The tonneau system includes a frame and a tonneau cover having a plurality of tonneau sections moveable between a folded position and an unfolded position. The tonneau cover includes solar energy-receiving material secured to a top exposed surface of at least two of the tonneau sections. The solar energy-receiving material moves with their corresponding tonneau sections between the unfolded and folded positions. A battery, transformer, and/or electrical cabling system may be included within the circuit for power storage and conversion.

A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

##STR00001##

A protective film applying apparatus includes a protective film forming and cleaning unit for forming a protective film on a surface of a wafer and cleaning the protective film away. A coverage state detector detects a coverage state of the protective film, and a controller determines whether or not the protective film has a film thickness falling within a predetermined range. If the controller decides that the thickness of the protective film does not fall in the predetermined range, the controller operates the protective film forming and cleaning unit to clean away the protective film, performs a pretreating process selected depending on the film thickness on the surface, and operates the protective film forming and cleaning unit to form a protective film again on the surface of the wafer.

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

A processing system includes at least one processor having a tank for holding a process liquid. A clean assembly above the tank is provided with an upper housing having at least one upper housing spray nozzle, and a lower housing having at least one lower housing spray nozzle, with the lower housing below the upper housing. A door between the upper housing and the lower housing is movable via an actuator from an open position wherein a load port through the clean assembly is open, to a closed position wherein the load port is closed off. The door largely prevents liquids used in the upper housing from moving down into the process liquid in the tank, and may also improve gas flow in the system.

Disclosed are a liquid treating apparatus and a liquid treating method. The liquid treating apparatus includes a chamber that provides a space for processing a substrate, a support unit that is provided in the chamber to support the substrate, an ejection unit that has a nozzle for supplying a cleaning medium to the substrate supported by the support unit, and an auxiliary ejection unit that has an auxiliary nozzle for supplying a contamination prevention liquid to the substrate supported by the support unit.

A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.