In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.

A substrate processing apparatus a processing liquid supply unit includes a nozzle supplying a processing liquid onto the substrate, a supply line connected to the nozzle to supply the processing liquid to the nozzle, and a cooler cooling the processing liquid. A volume of the processing liquid is reduced by the cooler so that the processing liquid may be sucked.

Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray and may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, a two-stage gas nozzle may be used to expand a fluid mixture with a liquid phase concentration of greater than 10% by weight.

The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

A fluid preparation system includes a tank, a chemical supply line, a mixer, and a deionized (DI) water supply line. The tank contains a first chemical solution. The chemical supply line is coupled to the tank and configured to supply the first chemical solution. The mixer is coupled to the tank. The DI water supply line is coupled to the mixer and configured to supply DI water. The first chemicals solution and the DI water are mixed at the mixer to generate a second chemical solution.

A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.

The present invention relates to a method for purifying hydrogen peroxide, and more particularly, to a method including purifying a crude product of hydrogen peroxide using a primary purification system, and purifying a primarily purified hydrogen peroxide solution using a secondary purification system. One of the primary purification system and the secondary purification system includes an electrodeionization system, and the other one of the primary purification system and the secondary purification system includes at least one from among a distillation system, a resin system, a reverse osmosis system, and a combination system thereof.

Provided are a method of manufacturing a semiconductor device in which the purity of a chemical liquid containing an organic solvent is more easily managed, a method of washing a semiconductor manufacturing apparatus, and a simpler method of measuring the cleanliness of a washing solution. A method of manufacturing a semiconductor device has Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain the amount of change in the resonance frequency of the oscillator resulting from the contact with the chemical liquid, Step 2 of confirming whether or not the amount of change in the resonance frequency of the chemical liquid falls within a permissible range of the amount of change in the resonance frequency based on the preset purity of the chemical liquid, and Step 3 of using the chemical liquid confirmed in Step 2 in manufacturing a semiconductor device.