A tonneau system for use with a pickup truck. The tonneau system includes a frame and a tonneau cover having a plurality of tonneau sections moveable between an extended position covering a cargo box of the pickup truck and a folded position forming a stack of the tonneau sections. The stack being coupled to the frame and pivotally moveable between a first position depending into the cargo box and a second position extending upward generally from the cargo box.

The present invention relates to a cleaning fluid containing components (A) to (C) and 0.001 mass % or less of a surfactant, in which component (A) is a compound represented by formula (1); component (B) is an alkaline compound; and component (C) is water,

##STR00001## in formula (1), R.sub.1 and R.sub.2 independently represent a hydroxyl group or a phenol group.

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

A wafer cleaning apparatus includes a spin base, a first arm, and a second arm. The spin base is configured to support a wafer. The first arm is disposed above the spin base and configured to supply a chemical solution. The second arm is movably positioned above the spin base, and the second arm is configured to supply a first cleaning solution above the spin base when the first arm abnormally stops supplying the chemical solution.

Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

A tonneau system for use with a cargo box of a pickup truck. The tonneau system includes a pair of side rails for mounting to the sidewalls of the cargo box and a tonneau cover having at least two tonneau sections and being moveable relative to one another between an unfolded state and a folded state. In the unfolded state the tonneau sections substantially covering the cargo box and in the folded state the tonneau sections being arranged in a stack. The stack of tonneau sections is pivotally connected to the side rails by a pivot connection that is moveable between secure and release positions. In the secure position, the stack being retainingly engaged with the side rails and, in the release position, the stack being removably engaged with the side rails whereby the stack is removable from the cargo box while the side rails remain mounted therewith.

A semiconductor manufacturing apparatus includes a chuck stage, a scrubber nozzle, a scrubber nozzle scan mechanism, a stage rotation mechanism, and a holding stage including a holding fluid nozzle and a top plate, the top plate having one main surface facing an opposite surface of a wafer, and the holding fluid nozzle being disposed adjacent to a center rather than a periphery portion of the top plate. A holding fluid discharged from the holding fluid nozzle is caused to flow through an area between the opposite surface of the wafer and the one main surface of the top plate to produce holding force, and the holding force causes the opposite surface to hold pressure applied to a processing surface of the wafer by a scrubbing fluid discharged from the scrubber nozzle.

The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus (1) for a component of a semiconductor production apparatus including: a cleaning processing furnace (2) which is configured to house the component (10) of a semiconductor production apparatus; a heating device (3); a gas introduction pipe (4); a gas discharge pipe (5); a decompression device (6); a first temperature control device (7); a second temperature control device (8); and a purge gas supply device (9).

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.