A foreign particle removal system for removing a foreign particle from a surface of an object has a tool gripper which grips a particle removal tool. A tip of the particle removal tool has a sticky tip portion. The sticky tip portion has an apex region at a remote end of the sticky tip portion and a flank region adjoining the apex region. The tool gripper holds the particle removal tool at an oblique angle with respect to the surface so that the flank region of the sticky tip portion faces towards the surface. The tilted particle removal tool is conveyed with the tool gripper to contact the foreign particle on the surface with the flank region of the sticky tip portion and a force is exerted onto the surface to attract the foreign particle onto the flank region. The particle removal tool may then be lifted away from the surface together with the foreign particle.

A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space therein; a treating container disposed within the inner space and having a treating space; a substrate support unit supporting a substrate in the treating space; a liquid supply unit supplying a liquid to the substrate supported by the substrate support unit; an exhaust unit exhausting a fume generated in the treating space; an airflow supply unit coupled to a top side of the housing and supplying a gas to form a downward airflow to the inner space; and a perforated plate disposed between the treating container and the airflow supply unit and discharging the gas to the inner space, and wherein the perforated plate comprises: a bottom portion and a side portion, the side portion comprising a first side portion, and the first side portion extending and upwardly inclining from the bottom portion to a first sidewall of the housing, and having a first hole for discharging the gas.

A gas solution supply device 1 includes: a first gas-liquid separator 8 in which gas solution is stored; a second gas-liquid separator 16 provided at a stage subsequent to the first gas-liquid separator 8 and in which gas solution to be supplied to a use point is stored; an intermediate line 17 provided between the first gas-liquid separator 8 and the second gas-liquid separator 16; a pressure booster pump 18 provided on the intermediate line 17 and increases a pressure of gas solution being supplied from the first gas-liquid separator 8 to the second gas-liquid separator 16; a gas supply line 2 that supplies gas as a material of the gas solution; and a gas dissolving unit 20 provided on the intermediate line 17 and dissolves the gas supplied from the gas supply line 2 in the gas solution supplied from the first gas-liquid separator 8.

The invention provides treatment systems useful to treat microelectronic workpieces with one or more treatment fluids dispensed onto a workpieces from one or more nozzle assemblies. The nozzle assemblies are easily moveable and positionable to change distance and/or angle of nozzle orientation relative to the substrates being treated. The nozzle assemblies are easily and quickly adjustable on demand. Adjustment may be manual or automated. The present invention is based at least in part upon coupling the nozzle directly or indirectly to a flexible bellows. As the bellows is flexed up or down or tilted, etc., the nozzle is moved in a corresponding manner. For example, the nozzle outlet can be moved closer or further away from the surface of the substrate being processed. The angle of the nozzle assembly, and hence the angle of the spray dispensed from the nozzle, with respect to the substrate can also be altered if desired.

A foreign particle removal system for removing a foreign particle from a surface of an object has a tool gripper which grips a particle removal tool. A tip of the particle removal tool has a sticky tip portion. The sticky tip portion has an apex region at a remote end of the sticky tip portion and a flank region adjoining the apex region. The tool gripper holds the particle removal tool at an oblique angle with respect to the surface so that the flank region of the sticky tip portion faces towards the surface. The tilted particle removal tool is conveyed with the tool gripper to contact the foreign particle on the surface with the flank region of the sticky tip portion and a force is exerted onto the surface to attract the foreign particle onto the flank region. The particle removal tool may then be lifted away from the surface together with the foreign particle.

A technique capable of shortening process time for plasma cleaning is provided. A method of manufacturing a semiconductor device includes a step of preparing a substrate including a plurality of device regions each including a semiconductor chip electrically connected to a plurality of terminals formed on a main surface by a wire, a step of delivering the substrate while emitting plasma generated in atmospheric pressure to the main surface of the substrate, a step of delivering the substrate while capturing an image of a region of the main surface of the substrate and a step of forming a sealing body by sealing the semiconductor chip and the wire with a resin.

A tonneau system for use with a pickup truck. The tonneau system includes a frame and a tonneau cover having a plurality of tonneau sections moveable between a folded position and an unfolded position. The tonneau cover includes solar energy-receiving material secured to a top exposed surface of at least two of the tonneau sections. The solar energy-receiving material moves with their corresponding tonneau sections between the unfolded and folded positions. A battery, transformer, and/or electrical cabling system may be included within the circuit for power storage and conversion.

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

A processing liquid containing a sublimable material is supplied to a front surface of a substrate to which a liquid adheres to form a liquid film. The liquid film is solidified into a solidified body. Nitrogen gas is supplied to the solidified body formed on the front surface of the substrate so that the flow rate thereof per unit area is constant over the entire surface of the substrate. The solidified body is sublimated uniformly over the entire surface of the substrate, and a gas-solid interface of the solidified body moves in a direction perpendicular to the front surface of the substrate. This precludes protrusions of a pattern from being pulled by the movement of the gas-solid interface of the solidified body, whereby the front surface of the substrate is dried well while the collapse of the pattern formed on the front surface of the substrate is prevented.