A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes an oxide semiconductor nanostructure suspended over a substrate. The semiconductor device structure also includes a source/drain structure adjacent to the oxide semiconductor nanostructure. The source/drain structure contains oxygen, and the oxide semiconductor nanostructure has a greater atomic concentration of oxygen than that of the source/drain structure. The semiconductor device structure further includes a gate stack wrapping around the oxide semiconductor nanostructure.

A method may include thinning a silicon wafer to a particular thickness. The particular thickness may be based on a passband frequency spectrum of an adjustable optical filter. The method may also include covering a surface of the silicon wafer with an optical coating. The optical coating may filter an optical signal and may be based on the passband frequency spectrum. The method may additionally include depositing a plurality of thermal tuning components on the coated silicon wafer. The plurality of thermal tuning components may adjust a passband frequency range of the adjustable optical filter by adjusting a temperature of the coated silicon wafer. The passband frequency range may be within the passband frequency spectrum. The method may include dividing the coated silicon wafer into a plurality of silicon wafer dies. Each silicon wafer die may include multiple thermal tuning components and may be the adjustable optical filter.

In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

A display apparatus may include a base substrate including a first portion and a second portion smaller than the first portion, a plurality of pixels disposed on the first portion, a protection substrate disposed below the base substrate, and a groove disposed in a portion of the protection substrate and overlapped with the second portion. The groove may include a first region extending in a first direction, and a second region and a third region, which are arranged along the first direction, wherein the first region is interposed between the second region and the third region. The first and second portions may be arranged in a second direction crossing the first direction, and a width of each of the second and third regions may be larger than a first width of the first region, when measured in the second direction.

A method of fabricating a multi-color display includes dispensing a photo-curable fluid that includes a color conversion agent over a display having a backplane and an array of light emitting diodes electrically integrated with backplane circuitry of the backplane, activating a plurality of light emitting diodes in the array of light emitting diodes to illuminate and cure the first photo-curable fluid to form a color conversion layer over each of the first plurality of light emitting diodes to convert light from the plurality of light emitting diodes to light of a first color, and removing an uncured remainder of the first photo-curable fluid. This process is repeated with a fluid having different color conversion components for another color.

A method of manufacturing an actuator includes a first electrode layer forming step, a dielectric elastomer layer forming step, and a second electrode layer forming step, and obtains the actuator in which dielectric elastomer layers and electrode layers have been concentrically laminated. In the first electrode layer forming step, an electrode material is provided to an outer circumferential surface of a shaft section to form the electrode layer. In the dielectric elastomer layer forming step, a sheet-like or paste-like dielectric elastomer material is provided to an outer circumferential surface of the electrode layer to form the dielectric elastomer layer. In the second electrode layer forming step, the electrode material is provided to an outer circumferential surface of the dielectric elastomer layer to form the electrode layer.

Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.

A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.