An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first controlled signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

A heat treatment device includes: a heating plate that supports and heats a substrate on which a resist film is formed, and the resist film is subjected to an exposure process; a chamber that covers a processing space above the heating plate; a gas ejecting unit that ejects a processing gas from above toward the substrate on the heating plate within the chamber; a gas supply unit that supplies a gas into the chamber from below a surface of the substrate, within the chamber; and an exhaust unit that evacuates inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

A transfer template, a display substrate, a display panel, and a method for manufacturing the same are provided in the embodiments of the disclosure, the transfer template being configured to transfer a material to be transferred, including: a transfer substrate; and a plurality of transfer units arranged on the transfer substrate and spaced apart from one another; an adhesive force between the plurality of transfer units and the material to be transferred is configured to be larger than another adhesive force between the transfer substrate and the material to be transferred.

There is provided a technique that includes: process chamber processing substrate; gas supply system supplying precursor gas into the process chamber; exhaust pipe connected to vacuum pump and evacuating inside of the process chamber; gas concentration sensor configured to measure concentration of the precursor gas passing through the exhaust pipe at front stage of the vacuum pump; a pressure sensor measuring pressure in the exhaust pipe at rear stage of the vacuum pump; dilution gas supply system supplying dilution gas into the vacuum pump or the exhaust pipe at the front stage; and a controller controlling the dilution gas supply system to supply the dilution gas into the vacuum pump or the exhaust pipe at the front stage at low rate corresponding to the measured concentration of the precursor gas and the measured pressure in the exhaust pipe at the rear stage.

A robot apparatus may include an upper arm adapted to rotate about a first rotational axis and a forearm rotatably coupled to the upper arm at a second rotational axis. A first wrist member may be rotatably coupled to the forearm at a third rotation axis. A second wrist member may be rotatably coupled to the forearm at the third rotation axis. A first end effector may be coupled to the first wrist member and a second end effector may be coupled to the second wrist member. The first wrist member and the second wrist member may be configured to rotate about the third rotational axis between a first pitch and a second pitch as a function of extension of the robot apparatus. Other apparatus and methods are disclosed.

A negative capacitance device includes a semiconductor layer. An interfacial layer is disposed over the semiconductor layer. An amorphous dielectric layer is disposed over the interfacial layer. A ferroelectric layer is disposed over the amorphous dielectric layer. A metal gate electrode is disposed over the ferroelectric layer. At least one of the following is true: the interfacial layer is doped; the amorphous dielectric layer has a nitridized outer surface; a diffusion-barrier layer is disposed between the amorphous dielectric layer and the ferroelectric layer; or a seed layer is disposed between the amorphous dielectric layer and the ferroelectric layer.

A method of fabricating a multi-color display includes dispensing a photo-curable fluid that includes a color conversion agent over a display having a backplane and an array of light emitting diodes electrically integrated with backplane circuitry of the backplane, activating a plurality of light emitting diodes in the array of light emitting diodes to illuminate and cure the first photo-curable fluid to form a color conversion layer over each of the first plurality of light emitting diodes to convert light from the plurality of light emitting diodes to light of a first color, and removing an uncured remainder of the first photo-curable fluid. This process is repeated with a fluid having different color conversion components for another color.