A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resistivity) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.

A semiconductor structure containing at least two metal resistor structures having different resistivities is provided and includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal layer portion and a first nitridized metal surface layer. A second metal resistor structure is located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content, a second metal layer portion and a second nitridized metal surface layer. The second nitrogen content of the second nitridized dielectric surface layer portion differs from the first nitrogen content of the first nitridized dielectric surface layer portion.

A semiconductor structure containing at least two metal resistor structures having different resistivities is provided and includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal layer portion and a first nitridized metal surface layer. A second metal resistor structure is located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content, a second metal layer portion and a second nitridized metal surface layer. The second nitrogen content of the second nitridized dielectric surface layer portion differs from the first nitrogen content of the first nitridized dielectric surface layer portion.

A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.

A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.

A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resistivity) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.

A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resistivity) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.

A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.

A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.

A semiconductor structure containing at least two metal resistor structures having different resistivities is provided and includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal layer portion and a first nitridized metal surface layer. A second metal resistor structure is located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content, a second metal layer portion and a second nitridized metal surface layer. The second nitrogen content of the second nitridized dielectric surface layer portion differs from the first nitrogen content of the first nitridized dielectric surface layer portion.