Provided is an assembling apparatus for a semiconductor manufacturing apparatus. The assembling apparatus includes: a body; lift attached to the body and configured to move a reaction tube having an opening at a lower end portion thereof vertically, thereby allowing a gas supply pipe to be installed inside the reaction tube through the opening while the reaction tube is held by the lift; gas supply source configured to supply a gas into the reaction tube through the gas supply pipe while the reaction tube is held by the lift; and an exhaust mechanism including a pump configured to exhaust an inside of the reaction tube through the opening, thereby performing a leakage test of the reaction tube while the reaction tube is held by the lift.

A method of semiconductor packaging includes providing a plurality of substrate units including at least one good known substrate unit on a first adhesive layer of a first carrier. The method includes applying a first activating source to the first adhesive layer in situ such that the first adhesive layer releases from the at least one good known substrate unit without physical contact by an outside source to the at least one good known substrate unit. The method includes transferring the at least one good known substrate unit onto a second adhesive layer of a second carrier, attaching at least one die to the at least one good known substrate unit, and applying a second activating source to the second adhesive layer such that the second adhesive layer releases from the at least one good known substrate unit.

Wafer processing with no dummies is sets forth, wherein an apparatus includes: a boat that hold a product substrates in array at all of positions where substrates may be held; a tubular reactor that houses the boat; a furnace surrounding an upper side and a lateral side of the reactor; a heater provided in the furnace and adapted to heat a side portion of the reactor; a ceiling heater provided in the furnace and adapted to heat a ceiling of the reactor; and a cap heater provided inside the reactor and below the boat; a gas supply mechanism individually supplying a gas to a top side of each of the product substrates.

Provided are an apparatus for manufacturing a semiconductor device and a method of manufacturing a semiconductor package using the same. The manufacturing apparatus may include a base with a plurality of through holes and weight blocks respectively bound by the through holes.

A conveying unit includes a housing; a collision prevention mechanism disposed on a sidewall of the housing; a gripping member configured to hold a carrier for carrying a semiconductor structure; a sensor disposed on the gripping member and configured to measure and collect data associated with vibration of the gripping member; and an unit controller disposed on the gripping member and configured to analyze the data from the sensor and control a movement of the conveying unit.

The invention relates to a method for optically representing electronic semiconductor components 2 on structural units 1 as used for contacting semiconductor components, and to a device which can be used for this purpose. The aim of the invention is to improve navigation on the structural unit 1. Regarding the structural unit 1 provided on a holding surface 19 of a holding device 18, a graphical representation 4 of the structural unit 1 or its semiconductor component 2, or of a section thereof, is provided, and a live image 3 of the semiconductor component 2 is displayed on a first display unit 33. A first graphical representation 4 is also displayed on the first display unit 33 in such a way that elements of the first graphical representation 4, referred to as overlays 5, superimpose the live image 3. The first graphical representation 4 is synchronized with the live image 3 in a computer-aided manner such that at least one overlay 5 corresponds to the associated element of the live image 3.

Methods for fabricating and refurbishing an assembly are disclosed herein. The method begins by applying an adhesive layer onto a first substrate. A second substrate is placed onto the adhesive layer, thereby securing the two substrates together, the adhesive layer bounding at least one side of a channel that extends laterally between the substrates to an exterior of the assembly. And, the substrates and the adhesive layer are subjected to a bonding procedure and allowing outgassing of volatiles from the adhesive layer to escape from between the substrates through the channel, wherein the substrates bonded by the adhesive layer form a component for a semiconductor vacuum processing chamber.

A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen element and an organic source containing the specific element and the halogen element; (b) supplying a second source to the substrate, the second source including at least one of amine, organic hydrazine, and hydrogen nitride; and (c) supplying a third source to the substrate, the third source including at least one of amine, organic hydrazine, hydrogen nitride, and organic borane.

Disclosed herein is a method of bonding substrates, a microchip, and a method of manufacturing the microchip capable of joining two substrates in a higher adhered state even when at least one of the substrate has a warpage or a roll. A method of bonding a first substrate and a second substrate each of which is made of glass or a resin comprises: a surface activating step for activating each of joining surfaces of the first substrate and the second substrate; and a pressurizing step for pressurizing the first substrate and the second substrate in a state that the first substrate and the second substrate are stacked such that respective joining surfaces contact each other. The joining surface of the first substrate and/or the joining surface of the second substrate are constituted with a plurality of joining regions segmented to be separate from one another by a segmenting recessed portion.

The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO.sub.2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.