H01L21/683

MULTI-ZONE HEATER WITH MINIMUM RF LOSS

Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an upper heater embedded within the electrostatic chuck body. The upper heater may include a center heater zone and one or more annular heater zones that are concentric with the center heating zone. The substrate support assemblies may include a lower heater embedded within the electrostatic chuck body at a position below the upper heater. The lower heater may include a plurality of arcuate heater zones.

SUBSTRATE DIVIDING METHOD
20230039486 · 2023-02-09 ·

A substrate dividing method includes preparing a substrate that is formed with division start points along streets and that has a protective sheet attached to a surface on one side thereof and rolling a roller on a surface on the other side of the substrate, to attach an expanding tape. Next, suction by a holding table is cancelled, and, in a state in which a slight gap is formed between a holding surface of the holding table and the protective sheet, the roller is brought into contact with the expanding tape and rolled, thereby extending cracks extending from the division start points while causing the substrate to sink into the gap through the protective sheet with the division start points as starting points, and the expanding tape is expanded to widen the chip intervals with the division start points as starting points.

Substrate bonding apparatus and method of manufacturing semiconductor device by using the substrate bonding apparatus

A substrate bonding apparatus includes a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base and configured to support the first substrate and configured to be deformed such that a distance between the first base and the first deformable plate is varied, and a first piezoelectric sheet on the first deformable plate and configured to be deformed in response to power applied thereto to deform the first deformable plate.

Method for automatic film expansion, storage medium, and device

A method and device for automatic film expansion and a storage medium are provided. The method includes the following. Perform overall stretching on an expanded film. An interval between each two adjacent LED wafers on the expanded film is monitored in real time. When an interval between two adjacent LED wafers on the expanded film is greater than or equal to a preset target interval, stop performing overall stretching, and search the expanded film for a local region where an absolute difference between an interval between two adjacent LED wafers and the preset target interval is greater than a preset error threshold. When the local region exists on the expanded film, perform local stretching on the local region until an absolute difference between an interval between each two adjacent LED wafers in the local region and the preset target interval is less than or equal to the preset error threshold.

Real time bias detection and correction for electrostatic chuck

A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, and measuring an initial current provided to at least a first electrode of the two electrodes. The method further includes initiating a process that affects a DC voltage of the substrate, then measuring a modified current provided to at least the first electrode, and determining, based at least on the initial current and the modified current, a modified chucking voltage for a selected one of the two electrodes, that will reduce chucking force imbalance across the substrate. The method also includes providing the modified chucking voltage to the selected one of the two electrodes.

Cold fluid semiconductor device release during pick and place operations, and associated systems and methods

Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

USE OF VACUUM CHUCKS TO HOLD A WAFER OR WAFER SUB-STACK

Techniques are described for holding a wafer or wafer sub-stack to facilitate further processing of the wafer of sub-stack. In some implementations, a wafer or wafer sub-stack is held by a vacuum chuck in a manner that can help reduce bending of the wafer or wafer sub-stack.

PROTECTIVE SHEETING FOR USE IN PROCESSING A SEMICONDUCTOR-SIZED WAFER AND SEMICONDUCTOR-SIZED WAFER PROCESSING METHOD
20180005862 · 2018-01-04 ·

A protective sheeting for use in processing a semiconductor-sized wafer has a substantially circular base sheet and a substantially annular adhesive layer applied to a peripheral portion of a first surface of the base sheet. The inner diameter of the adhesive layer is smaller than the diameter of the wafer. Further, the outer diameter of the adhesive layer is larger than the inner diameter of an annular frame for holding the wafer. A related method includes attaching the protective sheeting to a front side or a back side of the wafer via the adhesive layer on the first surface of the base sheet so that an inner peripheral portion of the adhesive layer adheres to an outer peripheral portion of the front side or the back side of the wafer, and processing the wafer after the protective sheeting has been attached to the front side or the back side thereof.

APPARATUS AND METHODS FOR MICRO-TRANSFER-PRINTING

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

APPARATUS AND METHODS FOR MICRO-TRANSFER-PRINTING

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.