A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

A method for evaluating an ease of splitting of a film-like adhesive under low-temperature conditions in which cooling expansion is performed, the method including: preparing a sample having a cross-sectional area A (mm.sup.2) from a film-like adhesive; determining a breaking work W (N.Math.mm), a breaking strength P (N), and a breaking elongation L (mm) of the sample by a break test under low-temperature conditions in a range of −15° C. to 0° C.; determining a breaking factor m of the sample expressed by Equation (1) below; and determining a breaking resistance R (N/mm.sup.2) of the sample expressed by Equation (2) below; and evaluating the ease of splitting based on the determined the breaking factor m and the breaking resistance R,

m=W/[1000×(P×L)]  (1)

R=P/A  (2).

Provided are: a wafer processing temporary adhesive that is for temporarily adhering a wafer to a support and that comprises a thermosetting resin composition containing a non-functional organopolysiloxane; a wafer laminate; and a thin wafer manufacturing method.

The present invention is an IC chip mounting apparatus for mounting an IC chip at a reference position of an inlay antenna while conveying the antenna, the IC chip mounting apparatus including: a nozzle configured to suck an IC chip when located at a first position and to place the IC chip at the reference position of the antenna when located at a second position; a nozzle attachment to which the nozzle is attached; an image acquisition unit configured to acquire an image of the IC chip sucked by the nozzle; and a correction amount determination unit configured to determine correction amounts for the IC chip sucked by the nozzle, based on the image acquired by the image acquisition unit. The correction amounts includes a first correction amount for correcting an angle of the nozzle around the axis, a second correction amount for correcting a position of the antenna in a conveying direction of the antenna, and a third correction amount for correcting the position of the antenna in a width direction.

Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies may include a support stem coupled with the electrostatic chuck body. The support assemblies may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies may include a ground electrode embedded within the electrostatic chuck body. The support assemblies may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Examples are disclosed that relate to aligning a pressure sensitive adhesive to a body of a display device for attachment of a display module to the display device. One example provides an electronic display device comprising a body, the body comprising a wall and a deck extending inwardly from the wall. The deck comprises a first reference feature configured to interface with a first index feature on a pressure sensitive adhesive application fixture, and a second reference feature configured to interface with a second index feature on the pressure sensitive adhesive application fixture. The electronic display device further comprises a display module supported by the deck, and a pressure sensitive adhesive adhering the display module to the deck.

Provided is an adsorption temporary fixing sheet having a sufficient shear adhesive strength in a direction parallel to its surface, and having a weak adhesive strength in a direction vertical to the surface. Also provided is a method of producing such adsorption temporary fixing sheet. The adsorption temporary fixing sheet includes a foam layer including an open-cell structure, wherein, when a silicon chip vertical adhesive strength of a surface of the foam layer after 20 hours at each of such different temperatures as −40° C., 23° C., or 125° C. is represented by V1 (N/1 cm□), V2 (N/1 cm□), or V3 (N/1 cm□) and when a silicon chip shearing adhesive strength of the surface of the foam layer after 20 hours at each of the different temperatures (−40° C., 23° C., or 125° C.) is represented by H1 (N/1 cm□), H2 (N/1 cm□), or H3 (N/1 cm□), relationships of V1<H1, V2<H2, and V3<H3 are satisfied.

An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.