Disclosed are various embodiments that involve mechanically flexible interconnects, methods of making mechanically flexible interconnects, methods of using mechanically flexible interconnects, and the like.

Disclosed are various embodiments that involve mechanically flexible interconnects, methods of making mechanically flexible interconnects, methods of using mechanically flexible interconnects, and the like.

Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. Locations of where the racetrack can be adjusted (for example, narrowed) and/or removed without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, a portion of the racetrack can be removed to create a break and/or a portion of the racetrack can be narrowed in a selected area.

Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.

Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.

A volatile memory device can include a bit line structure having a vertical side wall. A lower spacer can be on a lower portion of the vertical side wall, where the lower spacer can be defined by a first thickness from the vertical side wall to an outer side wall of the lower spacer. An upper spacer can be on an upper portion of the vertical side wall above the lower portion, where the upper spacer can be defined by a second thickness that is less than the first thickness, the upper spacer exposing an uppermost portion of the outer side wall of the lower spacer.

A volatile memory device can include a bit line structure having a vertical side wall. A lower spacer can be on a lower portion of the vertical side wall, where the lower spacer can be defined by a first thickness from the vertical side wall to an outer side wall of the lower spacer. An upper spacer can be on an upper portion of the vertical side wall above the lower portion, where the upper spacer can be defined by a second thickness that is less than the first thickness, the upper spacer exposing an uppermost portion of the outer side wall of the lower spacer.

Stress compensated systems and methods of compensating for electrical and mechanical stress are discussed. One example system can include a first circuit and a global stress compensation component. The first circuit can be configured to generate a first signal and can comprise at least one local stress compensation component (e.g., employing dynamic element matching, chopping, etc.). The global stress compensation component can comprise one or more stress sensors configured to sense one or more stress components associated with the system. The global stress compensation component can be configured to receive the first signal and to compensate for stress effects on the first signal.

Stress compensated systems and methods of compensating for electrical and mechanical stress are discussed. One example system can include a first circuit and a global stress compensation component. The first circuit can be configured to generate a first signal and can comprise at least one local stress compensation component (e.g., employing dynamic element matching, chopping, etc.). The global stress compensation component can comprise one or more stress sensors configured to sense one or more stress components associated with the system. The global stress compensation component can be configured to receive the first signal and to compensate for stress effects on the first signal.

A semiconductor device is provided that includes an epitaxial layer disposed on a semiconductor substrate, the epitaxial layer including an active region, in which at least one active element is formed, and an edge termination region, in which at least one edge termination structure is formed, the edge termination region being laterally adjacent to the active region. The semiconductor device further includes a charged layer disposed on an upper surface of the epitaxial layer, the charged layer covering at least a portion of the active region and extending laterally over at least a portion of the edge termination region. Active trenches may be formed in the active region, and at least one edge trench may be formed in the edge termination region. The charged layer may be formed on sidewalls of each of the active trenches and the edge trench using atomic layer deposition in a same processing step.