Patent classifications
H01L21/77
Array Substrate and Manufacturing Method Thereof, Display Panel and Display Device
A method for manufacturing an array substrate, including: forming a plurality of first metal layer patterns on a base substrate which are independent from each other, each of the plurality of first metal layer patterns including an end at a non-display region of the array substrate; forming an insulating layer on the plurality of first metal layer patterns; and forming a semiconductor pattern on the insulating layer, a portion of semiconductor pattern is disposed directly opposite to the end of the first metal layer patterns.
DISPLAY BACK PLATE AND FABRICATING METHOD THEREOF AND DISPLAY DEVICE
The present disclosure provides a display back plate and a fabricating method thereof and a display device. The display back plate includes a base layer. A plurality of recesses are formed in the base layer, and a plurality of sub-pixels are formed in the plurality of recesses. The sub-pixel includes a first electrode layer, which is formed in the recess, a light-emitting material layer, which is formed on the first electrode layer, and a second electrode layer, which is formed on the light-emitting material layer. Thickness differences exist among a plurality of the light-emitting material layers, and upper surfaces of the plurality of light-emitting material layers are positioned on the same plane.
Display Substrate, Manufacturing Method Thereof and Display Device
A display substrate, a manufacturing method thereof and a display device are provided, and the display substrate includes pixel units, each of the pixel units is provided with a thin film transistor, a pixel electrode and a common electrode; the pixel electrode and the common electrode are arranged in a same layer and insulated from each other, the pixel electrode includes a plurality of strip-shaped pixel sub-electrodes, the common electrode includes a plurality of strip-shaped common sub-electrodes, the plurality of strip-shaped pixel sub-electrodes (104) and the plurality of strip-shaped common sub-electrodes are alternately distributed, and an interval width between each pixel sub-electrode and each common sub-electrode adjacent to the pixel sub-electrode is from 1 μm to 5 μm. The display substrate is configured for solving the problem of low charging rate in large size display panels.
Display Substrate, Manufacturing Method Thereof and Display Device
A display substrate, a manufacturing method thereof and a display device are provided, and the display substrate includes pixel units, each of the pixel units is provided with a thin film transistor, a pixel electrode and a common electrode; the pixel electrode and the common electrode are arranged in a same layer and insulated from each other, the pixel electrode includes a plurality of strip-shaped pixel sub-electrodes, the common electrode includes a plurality of strip-shaped common sub-electrodes, the plurality of strip-shaped pixel sub-electrodes (104) and the plurality of strip-shaped common sub-electrodes are alternately distributed, and an interval width between each pixel sub-electrode and each common sub-electrode adjacent to the pixel sub-electrode is from 1 μm to 5 μm. The display substrate is configured for solving the problem of low charging rate in large size display panels.
Array substrate with double-gate TFT, method of fabricating the same, and display device
An array substrate, a method for fabricating the array substrate and a display device are described. The array substrate includes: a first gate electrode metal layer; a first gate insulation layer; an active layer on the first gate insulation layer; an etching barrier layer on the active layer; a source-drain metal layer including a source electrode and a drain electrode that contact with two sides of the active layer respectively; a second gate insulation layer on the source-drain metal layer; and a second gate electrode metal layer on the second gate insulation layer. The array substrate has an optimized TFT performance and a reduced gate line resistance, and light may be blocked from irradiating on the active layer, which is beneficial to restrain IR Drop, drifting of TFT threshold voltages or generation of a light-incurred leakage current on the active layer. Performance of the display device is improved.
Array substrate with double-gate TFT, method of fabricating the same, and display device
An array substrate, a method for fabricating the array substrate and a display device are described. The array substrate includes: a first gate electrode metal layer; a first gate insulation layer; an active layer on the first gate insulation layer; an etching barrier layer on the active layer; a source-drain metal layer including a source electrode and a drain electrode that contact with two sides of the active layer respectively; a second gate insulation layer on the source-drain metal layer; and a second gate electrode metal layer on the second gate insulation layer. The array substrate has an optimized TFT performance and a reduced gate line resistance, and light may be blocked from irradiating on the active layer, which is beneficial to restrain IR Drop, drifting of TFT threshold voltages or generation of a light-incurred leakage current on the active layer. Performance of the display device is improved.
Array Substrate and Method for Fabricating the Same, and Display Apparatus
The present disclosure provides an array substrate, a method for fabricating the same and a display apparatus, which belongs to the field of display technology and may alleviate at least a problem of wide bezel of a display apparatus in the related art. The array substrate includes a display region and a periphery region abutting the display region, the display region being provided with a plurality of AM-OLEDs therein. The array substrate further includes a plurality of PM-OLEDs provided in the periphery region, wherein both of the plurality of AM-OLEDs and the plurality of PM-OLEDs are electrically connected to a power supply driving unit. Since the plurality of PM-OLEDs capable of emitting light are disposed in the periphery region, the array substrate according to the present disclosure can realize a narrow-bezel design.
OLED ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND TOUCH DISPLAY DEVICE
The embodiments of the present invention provide an OLED array substrate, a method for manufacturing the OLED array substrate, and a touch display device. The OLED array substrate includes a first metal layer pattern, a transparent conductive layer pattern, an insulating layer pattern disposed between the first metal layer pattern and the transparent conductive layer pattern. The first metal layer pattern includes a metal bridge line. The transparent conductive layer pattern includes an anode of an OLED, a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction. Each of the first electrodes includes a plurality of first sub-electrodes, and each of the first sub-electrodes is electrically connected to a corresponding metal bridge line.
PREPARATION METHOD FOR THIN FILM TRANSISTOR, PREPARATION METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.
PREPARATION METHOD FOR THIN FILM TRANSISTOR, PREPARATION METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.