A temporary bond method and apparatus for allowing wafers, chips or chiplets. To be tested, the temporary bond method and apparatus comprising: a temporary connection apparatus having one of more knife-edged microstructures, wherein the temporary connection apparatus serves, in use, as a probe device for probing the chiplets, each chiplet including a die having one or more flat contact pads which mate with the one of more knife-edged microstructures of the temporary connection apparatus; a press apparatus for applying pressure between the one or more flat contact pads on the chiplet with the one of more knife-edged microstructures of the temporary connection apparatus thereby forming a temporary bond between the temporary connection pad with the knife-edged microstructure in contact with the one or more flat wafer pads; the press being able to apply a pressure to maintain the temporary bond connection during or prior to testing of the chiplet.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

The present disclosure provides a latch-up test structure, including: a substrate of a first conductive type; a first well region of the first conductive type, located in the substrate of the first conductive type; a first doped region of the first conductive type, located in the first well region of the first conductive type; a first doped region of a second conductive type, located in the first well region of the first conductive type; and a second doped region of the first conductive type, a second doped region of the second conductive type, a third doped region of the first conductive type, and a third doped region of the second conductive type that are arranged at intervals in the substrate of the first conductive type.

A semiconductor memory device includes a first and second substrates; and a first and second element layers respectively provided on an upper surface of the first and the second substrates. The first and second substrates respectively include a first and second vias. The first and second element layers respectively includes a first and second pads respectively electrically coupled to the first and second vias, and respectively provided on an upper surface of the first and second element layers. The upper surface of the second element layer is arranged so as to be opposed to the upper surface of the first element layer. The first and second pads are electrically coupled and symmetrically arranged with respect to a surface where the first and second element layers are opposed to each other.

A semiconductor memory device includes a first and second substrates; and a first and second element layers respectively provided on an upper surface of the first and the second substrates. The first and second substrates respectively include a first and second vias. The first and second element layers respectively includes a first and second pads respectively electrically coupled to the first and second vias, and respectively provided on an upper surface of the first and second element layers. The upper surface of the second element layer is arranged so as to be opposed to the upper surface of the first element layer. The first and second pads are electrically coupled and symmetrically arranged with respect to a surface where the first and second element layers are opposed to each other.

Nanospike contactors suitable for semiconductor device test, and associated systems and methods are disclosed. A representative apparatus includes a package having a wafer side positioned to face toward a device under test and an inquiry side facing away from the wafer side. A plurality of wafer side sites are carried at the wafer side of the package. The nanospikes can be attached to nanospike sites on a wafer side of the package. Because of their small size, multiple nanospikes make contact with a single pad/solderball on the semiconductor device. In some embodiments, after detecting that the device under test passes the test, the device under the test can be packaged to create a known good die in a package.

The invention is directed to a method for the production of an optoelectronic module including a support (5) and an additional layer, said support being formed by an assembly (25) which has no optoelectronic properties and which comprises, successively, a metal substrate (27), a dielectric coating (29) disposed on the metal substrate, and an electrically conductive layer (31) disposed on the dielectric coating. The production method comprises: a step of providing the support and performing a method in which the support is checked, or providing the support after it has already been checked; and a step of depositing at least one additional layer on the electrically conductive layer. The method in which support is checked comprises the following steps: electrical excitation of the support by bringing the metal substrate and the electrically conductive layer into electrical contact with a voltage source (33); and photothermal examination of the excited support so as to detect any possible fault (49, 51) located at least partially in the dielectric coating (29) and to provide a photothermal examination result.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A method is provided. The method includes one or more of extracting a die from an original packaged integrated circuit, modifying the extracted die, reconditioning the modified extracted die, placing the reconditioned die into a cavity of a hermetic package base, bonding a plurality of bond wires between reconditioned die pads of the reconditioned die to leads of the hermetic package base or downbonds to create an assembled hermetic package base, and sealing a hermetic package lid to the assembled hermetic package base to create a new packaged integrated circuit. Modifying the extracted die includes removing the one or more ball bonds on the one or more die pads. Reconditioning the modified extracted die includes adding a sequence of metallic layers to bare die pads of the modified extracted die. The extracted die is a fully functional semiconductor die with one or more ball bonds on one or more die pads of the extracted die.