A display including a base, a plurality of pixels disposed on the base in rows and columns, at least one of the pixels including a first interconnect and a plurality of second interconnects, and a plurality of mounting portions on which a plurality of sub-pixels is to be mounted, in which a first portion of each of the plurality of mounting portions is electrically connected to the first interconnect, a second portion of each of the plurality of mounting portions is electrically connected to one of the second interconnects, and at least one of the plurality of sub-pixels mounted on the plurality of mounting portions is configured to emit light of different wavelength.

A circuit-board component and a manufacturing method thereof, and a light-emitting component and a manufacturing method thereof are provided in the disclosure. The light-emitting component includes the circuit-board component. The circuit-board component includes a circuit hoard, where multiple chip bonding areas are defined on the circuit board, and a weakening layer disposed on the circuit board and defining multiple cavities, where one chip bonding area corresponds to one cavity.

The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier; forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

In a method of repairing through-electrodes, a plurality of through-electrodes are grouped into a plurality of through-electrode groups. A plurality of redundant through-electrodes are grouped into a plurality of redundant through-electrode groups. Repair paths for the plurality of through-electrodes are searched. When searching the repair paths, in response to a Y-th through-electrode included in an X-th through-electrode group being a defective through-electrode or in response to receiving a first signal from an (X−1)-th through-electrode group, it is determined whether a y-th redundant through-electrode included in an x-th redundant through-electrode group is available for performing signal transmission thereto. In response to the y-th redundant through-electrode being available for performing signal transmission thereto, a second signal input to the Y-th through-electrode is transmitted to the y-th redundant through-electrode. In response to the y-th redundant through-electrode being unavailable for performing signal transmission thereto, the second signal input to the Y-th through-electrode is transmitted to an (X+1)-th through-electrode group.

Embodiments of the present disclosure provide an apparatus match detection method, a detection system, a prewarning method and a prewarning system, the apparatus match detection method includes: providing a to-be-detected wafer, a first detection apparatus, and a second detection apparatus; measuring by the first detection apparatus a critical dimension of the first detection area to acquire a first detection result; measuring by the second detection apparatus a critical dimension of the third detection area to acquire a third detection result; measuring by the first detection apparatus a critical dimension of the second detection area to acquire a second detection result; acquiring a measurement difference between the first detection apparatus and the second detection apparatus based on the first detection result, the second detection result, and the third detection result; and acquiring a degree of deviation between the second detection apparatus and the first detection apparatus based on the measurement difference.

Methods for manufacturing a display device are provided. A representative method includes: providing a substrate, the substrate having an insulating layer with an opening and having a metal layer under the opening, wherein a part of the metal layer does not serves as a portion of a thin film transistor; providing a carrier substrate supporting a plurality of light emitting diodes; conducting a testing to the plurality of LEDs on the carrier substrate; transferring at least one of the plurality of LEDs from the carrier substrate to the opening of the substrate; and fixing the at least one of the plurality of LEDs to the substrate.

The present disclosure illustrates a repair method for an active matrix substrate. The repair method includes steps: performing the broken-line inspection process to inspect whether the broken line exists on the first and second gate lines; if one first gate line is inspected to be broken, performing a source line repair-section forming process to cut off the cut portions of the second source lines disposed at two sides of a pixel electrode corresponding to a broken location of the first gate line, to form source line repair sections overlapping with the broken first gate line and the second gate line; performing a gate line repair-section forming process on the second gate line, adjacent to the broken first gate line, to cut off the cut portions of the second gate line to form a gate line repair section overlapping with the second source lines; and performing a connection process.

A light-emitting diode (LED) chip assembly and a preparing method thereof, and a preparing method of a display panel are provided. The LED chip assembly includes a patterned substrate, a patterned support layer, and multiple LED chips. The patterned substrate defines multiple through holes. The patterned support layer is disposed on a surface of the patterned substrate and attached to the patterned substrate. Each LED chip at least partially extends into each through hole. The each LED chip is partially embedded in the patterned support layer, and the each LED chip has a face surface away from the patterned support layer. The patterned support layer defines a hollow structure at a position opposite to a back surface of the each LED chip.

Implementations of a method for healing a crack in a semiconductor substrate may include identifying a crack in a semiconductor substrate and heating an area of the semiconductor substrate including the crack until the crack is healed.

According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.