A thin film analyzing device includes a processing and analyzing chamber for performing processing and analyzing of a subject having a thin film on a substrate. The processing and analyzing chamber includes a sample holder arranged to hold the subject, an X-ray irradiation source arranged to irradiate the subject with X-rays, a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the subject, a diffracted/reflected X-ray detector configured to detect reflected X-rays and diffracted X-rays which are emitted from the subject, and a substrate remover arranged to remove the substrate.

An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Devices and methods of manufacture for a graduated, “step-like,” capacitance structure having two or more capacitors. A semiconductor structure comprising a capacitor structure, the capacitor structure comprising a first capacitor and a second capacitor. The first capacitor comprising a first bottom electrode and a top electrode having a bottom surface that is a first distance from a top surface of the first bottom electrode. The second capacitor comprising a second bottom electrode and the top electrode, in which the bottom surface is a second distance from a top surface of the second bottom electrode, and in which the first distance is different from the second distance.

A diaphragm position of a valve may be detected and/or determined such that operation of the diaphragm may be monitored. A sensor included in the valve may generate sensor data that may be used to monitor the position of the diaphragm, which in turn may be used to determine a flow of a fluid through the valve. In this way, the sensor may be used to determine whether the diaphragm is properly functioning, may be used to identify and detect failures of the diaphragm, and/or may be used to quickly terminate operation of an associated deposition tool. This may reduce semiconductor substrate scrap, may reduce device failures on semiconductor substrates that are processed by the deposition tool, may increase semiconductor processing quality of the deposition tool, and/or may increase semiconductor processing yields of the deposition tool.

In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.

A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.

Embodiments disclosed herein include an optical sensor system for use in plasma processing tools. In an embodiment, the optical sensor system, comprises an optically clear body with a first surface and a second surface facing away from the first surface. In an embodiment, the optically clear body further comprises a third surface that is recessed from the second surface. In an embodiment, the optical sensor system further comprises a target over the third surface and a first reflector to optically couple the first surface to the target.