A packaging structure, a method for manufacturing the same and a semiconductor device are provided. The packaging structure includes a redistribution layer electrically connected with an interconnection layer of a semiconductor functional structure, and an insulating layer covering and exposing part of the redistribution layer. The exposed part of the redistribution layer includes at least one first pad. The first pad includes a first area and a second area arranged continuously. The first area is configured for testing. The second area is configured for performing functional interaction corresponding to content of the test.

Embodiments described herein provide techniques for testing a semiconductor package by using a diode to couple a test pad to a contact pad. In one scenario, a package comprises a die stack comprising one or more dies and a molding compound encapsulating the die stack. In this package, a substrate is over the molding compound. Also, a test pad and a contact pad are on a surface of the substrate. The contact pad is coupled to the die stack. A diode couples the test pad to the contact pad. In one example, the test pad is coupled to a P side of the diode's P-N junction and the contact pad is coupled to an N side of the diode's P-N junction. In operation, current can flow from the test pad through the contact pad (and the die stack), but current cannot flow from the contact pad through the test pad.

It is described an RF communication device comprising: i) an RF antenna functionality; ii) at least one antenna pad connected to the RF antenna functionality; iii) a further functionality which is not an RF antenna functionality; and iv) at least one non-antenna pad electrically connected to the further functionality.

The antenna pad and the non-antenna pad are arranged to be short-circuited with each other, and the non-antenna pad is electrically connected via a connection line to the further functionality within the RF communication device.

Further, a method of manufacturing an RF communication device is described.

A method of fabricating a device involves forming a plurality of structures, such that each structure of the plurality includes a substrate and an epitaxial layer on the substrate. The epitaxial layer and the substrate have a lattice mismatch. The method further includes forming an electrical contact on the epitaxial layer of a selected structure of the plurality of structures and performing a current leakage measurement quality control test for the selected structure of the plurality of structures through the electrical contact. The method also involves forming a device on each of the remaining structures of the plurality of structures if the selected structure passed the leakage measurement quality control test or discarding each of the remaining structures of the plurality of structures if the selected structure did not pass the leakage measurement quality control test.

A chip for wafer-level testing of fanout chiplet, including: a die; a carrier substrate; a plurality of redistribution layers applied to the carrier substrate; and one or more first conductive pathways in the plurality of redistribution layers, wherein the one or more first conductive pathways each comprise a first end coupled to a corresponding input/output connection point of the die and a second end coupled to a corresponding probing site, wherein the one or more first conductive pathways are not routed through the carrier substrate.

An object is to provide a semiconductor device that implements cost reduction as well as determination of withstand voltage characteristics. A semiconductor substrate includes a semiconductor element on the front surface thereof and a back surface electrode on the back surface thereof that controls the operation of the semiconductor element. A first electrode and a second electrode are provided in a terminal region outside an active region in which the semiconductor element is formed. An insulating film is provided between the first electrode and the second electrode. The second electrode is provided on an insulating interlayer film provided on the front surface of the semiconductor substrate. The first electrode is in contact with the front surface of the semiconductor substrate and is provided on the semiconductor substrate closer to an end portion thereof than the second electrode is, and is electrically connected to the back surface electrode.

An electronic chip includes a seal ring whose shape is contained within a rectangle, of a width equal to a maximum width of the electronic chip and a length equal to a maximum length of the electronic chip. At least one test pad is arranged at least partially within the rectangle. The test pad is shared with at least one other adjacent electronic chip.

An integrated circuit device includes: a substrate having an active surface, an inactive surface, a first region and a second region; a device structure on the active surface, and including individual devices disposed in the first region and a target through-region disposed in the second region; a multilayer wiring structure including wiring layers, wherein at least one wiring layer among the wiring layers has a landing pad overlapping the target through-region; and a through-via structure connected to the landing pad by penetrating through the second region and the target through-region, wherein the target through-region includes first insulating material patterns and dummy device patterns, wherein the first insulating material patterns each have a first area, wherein the dummy device patterns are on the active surface and each have a second area smaller than the first area, and wherein the first insulating material patterns are alternatively arranged with the dummy device patterns.

A method of forming a semiconductor structure is provided. A layout of a substrate is provided. The layout includes a surface having an inner region and an outer region surrounding the inner region. An under bump metallurgy (UBM) pad region within the outer region is defined. The UBM pad region is partitioned into a first zone and a second zone, wherein the first zone faces towards a center of the substrate, and the second zone faces away from the center of the substrate. The substrate is provided according to the layout, wherein the providing of the substrate includes forming a conductive via in the substrate. The conductive via is disposed outside the second zone and at least partially overlaps the first zone from a top view perspective. A UBM pad is formed over the conductive via and within the UBM pad region.

The present disclosure relates to a through-silicon via (TSV) crack detecting apparatus, a detecting method, and a fabricating method of the semiconductor device. The TSV crack detecting apparatus includes a test TSV, a conductive liner, a second dielectric liner, a first contact, and a second contact. The test TSV is disposed within a semiconductor substrate, including a conductive channel and a first dielectric liner for isolating the conductive channel and the semiconductor substrate. The conductive liner surrounds the first dielectric liner. The second dielectric liner surrounds the conductive liner. The first contact is connected to the conductive channel. The second contact is connected to the conductive liner. A voltage difference between the first contact and the second contact is used to determine whether a TSV within a predetermined range to the test TSV has a crack based on a conductive state between the first contact and the second contact.