An integrated circuit, IC, comprising one or more DC blocking modules connected to a respective input/output, IO, pin of the IC, each DC blocking module comprising: a capacitor having a first terminal connected to the respective IO pin and a second terminal connected to a node of the circuitry of the IC; and an electrostatic discharge, ESD, protection circuit connected in parallel to the capacitor, the ESD protection circuit comprising: a conduction path connected between the first terminal of the capacitor and the second terminal of the capacitor; and a control terminal configured to receive a control signal to switch the ESD protection circuit between: an operational mode in which the conduction path is in a non-conducting state and provides ESD protection to the capacitor; and a test mode in which the conduction path is in a conducting state and short circuits the capacitor.

A method includes bonding a first device die to a second device die, encapsulating the first device die in a first encapsulant, performing a backside grinding process on the second device die to reveal through-vias in the second device die, and forming first electrical connectors on the second device die to form a package. The package includes the first device die and the second device die. The method further includes encapsulating the first package in a second encapsulant, and forming an interconnect structure overlapping the first package and the second encapsulant. The interconnect structure comprises second electrical connectors.

A semiconductor package including a substrate including at least one ground pad and a ground pattern; a semiconductor chip on the substrate; and a shield layer on the substrate and covering the semiconductor chip, wherein the shield layer extends onto a bottom surface of the substrate and includes an opening region on the bottom surface of the substrate, a bottom surface of the at least one ground pad is at the bottom surface of the substrate, a side surface of the ground pattern is at a side surface of the substrate, and the shield layer on the bottom surface of the substrate is in contact with the bottom surface of the at least one ground pad and in contact with the side surface of the ground pattern.

A method for bonding tested wafers is provided. The method includes the following operations. A first wafer having a first surface is received, and the first wafer includes a test pad and a conductive pad at the first surface of the first wafer and the test pad has a recess caused by a test probe and the conductive pad is electrically connected to the test pad. The first surface of the first wafer is planarized. A first hybrid bonding layer is formed over the first surface of the first wafer. The first wafer and a second wafer are bonded to connect the first hybrid bonding layer and a second hybrid bonding layer on the second water. A semiconductor structure and a method for testing pre-bonded wafers are also provided.

A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and >1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die module coupled to the package substrate. In an embodiment, the die module comprises a die and a chiplet coupled to the die. In an embodiment, the chiplet is coupled to the die with a hybrid bonding interconnect architecture.

An electronic device includes one or more multinode pads having two or more conductive segments spaced from one another on a semiconductor die. A conductive stud bump is selectively formed on portions of the first and second conductive segments to program circuitry of the semiconductor die or to couple a supply circuit to a load circuit. The multinode pad can be coupled to a programming circuit in the semiconductor die to allow programming a programmable circuit of the semiconductor die during packaging. The multinode pad has respective conductive segments coupled to the supply circuit and the load circuit to allow current consumption or other measurements during wafer probe testing in which the first and second conductive segments are separately probed prior to stud bump formation.

Signal delay, etc. in a signal path from an electrode pad to a functional block is reduced. An input-output block A and an input-output block B are connected to electrode pads. A functional block A is connected to the electrode pads via the input-output block A. A functional block B is connected to the electrode pads via the input-output block B. The functional block A and the functional block B are arranged at positions opposed to each other so as to sandwich the input-output block A and the input-output block B.