According to various examples, a device is described. The device may include a stiffener member including a first step section and a second step section. The device may also include a plurality of vias extending from or through the stiffener member. The device may be coupled to a printed circuit board.

According to one embodiment, a semiconductor device includes at least a package substrate, an external electrode, a mounting substrate, and a mounting electrode. A signal connection point of the external electrode is provided at an end portion in a longitudinal direction of the external electrode. A signal connection point of the mounting electrode is provided at an end portion of the mounting electrode. The end portion of the mounting electrode is opposite to the signal connection point of the external electrode facing to the mounting electrode in the longitudinal direction.

According to one embodiment, a semiconductor device includes at least a package substrate, an external electrode, a mounting substrate, and a mounting electrode. A signal connection point of the external electrode is provided at an end portion in a longitudinal direction of the external electrode. A signal connection point of the mounting electrode is provided at an end portion of the mounting electrode. The end portion of the mounting electrode is opposite to the signal connection point of the external electrode facing to the mounting electrode in the longitudinal direction.

A method produces a device adapted to be implanted into the human body for purposes such as neural stimulation, sensing or the like. The method includes: providing a stretchable layer or membrane of an insulating material; forming on the layer or membrane at least one stretchable conductive path; depositing at least one small bolus of a soft and conductive paste or material onto pre-defined areas or portions of the at least one conductive path, and inserting a first end portion of a conductive element 71 into the at least one bolus of soft conductive paste or material. A second end portion of the conductive element opposite to the first end portion is not inserted into the at least one bolus.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

The present invention relates to an improved electronic circuit, as well as an improved substrate with electronic circuits, with an identification pattern. The invention makes it possible to make them identifiable and amongst other things to retrace the circuit(s) in this way through the production process. Furthermore, the invention relates to an improved production method for circuits and substrates according to the invention.

The present invention relates to an improved electronic circuit, as well as an improved substrate with electronic circuits, with an identification pattern. The invention makes it possible to make them identifiable and amongst other things to retrace the circuit(s) in this way through the production process. Furthermore, the invention relates to an improved production method for circuits and substrates according to the invention.

A placement base (100) of a semiconductor device (90) comprises a body (10), to which a radiation agent (80) having viscosity is applied and on which a semiconductor device (90) is disposed, and a protrusion (20), which is placed in an outer periphery of the body (10) and on which the semiconductor device (90) is not disposed. A detective groove (30) for introducing the radiation agent (80) is provided on a surface of the protrusion (20).

A placement base (100) of a semiconductor device (90) comprises a body (10), to which a radiation agent (80) having viscosity is applied and on which a semiconductor device (90) is disposed, and a protrusion (20), which is placed in an outer periphery of the body (10) and on which the semiconductor device (90) is not disposed. A detective groove (30) for introducing the radiation agent (80) is provided on a surface of the protrusion (20).

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.