An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.

An integrated circuit device includes a heating element, and a temperature sensor configured to detect a temperature of the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side, and when a direction along the first side of the integrated circuit device is set as an X direction and a direction along the second side is set as a Y direction, the heating element includes a first heating element, and a second heating element arranged adjacent to the first heating element along the Y direction with a region AR interposed therebetween. The temperature sensor is arranged at an arrangement position where a position in the X direction is a position between a center of the region AR and the second side, and a position in the Y direction is a position between the first heating element and the second heating element.

An integrated circuit device includes a heating element, and a control circuit configured to control flow of a current through the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side. An outer shape of the heating element has a short side and a long side. A distance between the long side of the heating element and the first side of the integrated circuit device is larger than a distance between the short side of the heating element and the second side of the integrated circuit device.

Methods and systems for providing de-icing and/or de-fogging of an optical element include providing a resistive layer on an optically transparent material. In one embodiment, an optical system includes an optical device having a moldable optical material having a first surface, a resistive transparent material deposited in a layer on the first surface, and a conductive pad in electrical contact with the resistive transparent material. A method can include providing a moldable optical material having a first surface, a resistive transparent material deposited in a layer on the first surface, and a conductive pad in electrical contact with the resistive transparent material, and providing electrical energy to the conductive pad to heat the resistive transparent material.

Examples discussed herein relate to managing power allocation for devices, such as network devices, with processing chip. In some examples, based on determining that a first temperature measurement of the processing chip does not satisfy an operating temperature threshold, the network device allocates power from a power source to a first heating element of the network device to heat the processing chip & allocates power from the power source to a second heating element of the network device to heat the processing chip. Based on determining that a second temperature measurement satisfies the operating temperature threshold, the network device allocates power from the power source to a set of power over ethernet ports of the network device & the first amount of power from the power source selectively to the first heating element to heat the processing chip.

Moisture that is possibly present in an integrated circuit is detected autonomously by the integrated circuit itself. An interconnect region of the integrated circuit includes a metal level with a first track and a second track which are separated by a dielectric material. A detection circuit applies a potential difference between the first and second tracks. A current circulating in one of the first and second tracks in response to the potential difference is measured and compared to a threshold. If the current exceeds the threshold, this is indicative of the presence of moisture which renders said dielectric material less insulating.

A system includes a platform and a contactor. The platform has a side configured to support a frame with a carrier structure and electronic devices each having first and second sides and a terminal, the first side positioned on the carrier structure, and the terminal exposed in a first portion of the second side. The contactor has first and second sides, a contact and a heater. The contact is exposed on the first side of the contactor to contact the terminal in a first portion of the second side of a selected one of the electronic devices, and the heater is exposed on the first side of the contactor to apply heat to a second portion of the second side of the selected one of the electronic devices.

A method of manufacturing a low program voltage flash memory cell with an embedded heater in the control gate creates, on a common device substrate, a conventional flash memory cell in a conventional flash memory area (CFMA), and a neuromorphic computing memory cell in a neuromorphic computing memory area (NCMA). The method comprises providing a flash memory stack in both the CFMA and the NCMA, depositing a heater on top of the flash memory stack in the NCMA without depositing a heater on top of the flash memory stack in the CFMA.

An optical semiconductor element includes an optical receiver including a first semiconductor layer, a heater for heating the first semiconductor layer; and a monitor. A first semiconductor layer that absorbs light and generates electric carriers; a heater for heating the first semiconductor layer; and a monitor including a second semiconductor layer in which dark current is changed by heat generated by the heater.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a low emissivity layer that is disposed at an inner surface of the first lid and that has an emissivity lower than an emissivity of the first lid. In addition, a constituent material of the first lid is silicon, and the emissivity of the low emissivity layer at room temperature is less than 0.5.