A controller for an electric heating device comprising a support element and a busbar which is secured on the support element and which is connected to an SMD component in an electrically conductive manner. The busbar is part of an initially single-part stamped metal plate with a severed connecting piece, which separates the metal plate into a supply element and a discharge element, the elements being connected together in an electrically conductive manner solely via the SMD component. Also disclosed is a method of producing an electric heating device generally as described above such that the supply element and the discharge element are produced from the supply element region and the discharge element region on the stamped metal plate, respectively.

Embodiments are generally directed to extended temperature operation for electronic systems using induction heating. An embodiment of an apparatus includes an electronic device including: a die or package; a thermal solution coupled with the die or package for cooling of the die or package; and ferromagnetic material, wherein the ferromagnetic material is to generate induction heating of the die or package in response to an alternating magnetic field.

Embodiments include a reflowable grid array (RGA) interposer, a semiconductor packaged system, and a method of forming the semiconductor packaged system. The RGA interposer includes a plurality of heater traces in a substrate. The RGA interposer also includes a plurality of vias in the substrate. The vias extend vertically from the bottom surface to the top surface of the substrate. The RGA interposer may have one of the vias between two of the heater traces, wherein the vias have a z-height that is greater than a z-height of the heater traces. The heater traces may be embedded in a layer of the substrate, where the layer of the substrate is between top ends and bottom ends of the vias. Each of the plurality of heater traces may include a via filament interconnect coupled to a power source and a ground source. The heater traces may be resistive heaters.

Embodiments include a reflowable grid array (RGA) interposer, a semiconductor packaged system, and a method of forming the semiconductor packaged system. The RGA interposer includes a substrate having vias and zones, where the zones have embedded heaters. The heaters may include first traces, second traces, and via filament interconnects. The vias may have a z-height greater than a z-height of the heaters, and each of the zones may have a grid pattern. The RGA interposer may include first and second layers in the substrate, where the first layer includes the first traces, the second layer includes the second traces, and the second layer is over the first layer. The grid pattern may have parallel first traces orthogonal to parallel second traces to form a pattern of squares, where the pattern of squares has the first traces intersect the second traces substantially at right angles.

Embodiments include interposers for use in high speed applications. In an embodiment, the interposer comprises an interposer substrate, and an array of pads on a first surface of the interposer substrate. In an embodiment, a plurality of vias pass through the interposer substrate, where each via is electrically coupled to one of the pads in the array of pads. In an embodiment a plurality of heating elements are embedded in the interposer substrate. In an embodiment a first cable is over the first surface interposer substrate. In an embodiment, the first cable comprises an array of conductive lines along the first cable, where conductive lines proximate to a first end of the cable are electrically coupled to pads in the array of pads.

A self-healing microchip comprising a commercial-off-the-shelf (COTS) microchip lacking radiation shielding. The self-healing microchip includes one or more microheaters that are integrated directly upon a surface of the COTS microchip, a self-test circuit which detects a degradation in the COTS microchip, and one or more temperature sensors. The one or more microheaters may be formed directly upon a backside surface of the COTS microchip using tungsten sputtered shadow mask patterning or by lithography and etching, for example. In response to a detected degradation in the COTS microchip, a temperature control configures an output temperature generated by the one or more microheaters and an amount of time at which the output temperature is maintained to cause annealing in the microchip responsive to the detected degradation in the COTS microchip.

According to an embodiment of the present disclosure, to improve a layout efficiency of an element substrate to be integrated in a printhead and reduce a production cost of the element substrate, a driving method and a size of a first driver transistor used for driving a first heater for ink circulation and a driving method and a size of a second driver transistor used for driving a second heater for discharging ink to print are optimized, respectively. More specifically, the first driver transistor and the second driver transistor have multi-finger configurations, gate widths of the multi-finger configurations are equal to each other, and the number of fingers forming each first driver transistor is different from the number of fingers forming each second driver transistor.

A reflowable grid array (RGA) interposer includes first connection pads on a first surface of a body and second connection pads on a second surface of the body. Heating elements within the body are adjacent to the second connection pads. First interconnects within the body connect some of the second connection pads to the first connection pads. Second interconnects within the body connect pairs of the second connection pads. A motherboard assembly includes first and second components (e.g., CPU with co-processor and/or memory) and the RGA interposer. The first connection pads are in contact with motherboard contacts. The second connection pads are in contact with the first and second components. The first component passes signals directly to the motherboard by the first interconnects. The second component passes signals directly to the first component by the second interconnects but does not pass signals directly to the motherboard by the first interconnects.

A semiconductor device includes a substrate; a die attached to the substrate; an encapsulation covering the substrate and the die, wherein the die is embedded within the encapsulation; and a heating element embedded within the encapsulation, wherein the heating element is configured to provide thermal energy to the die.

A semiconductor device includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. An integrated passive device (IPD) is disposed in an interlayer dielectric above the PCM RF switch, and is a metal resistor, a metal-oxide-metal (MOM) capacitor, and/or and inductor. In another approach, the PCM RF switch is disposed in an interlayer dielectric above the IPD, and the IPD is a poly resistor and/or a capacitor.