A system can control, with a positive temperature-voltage correlation, an output of a voltage regulator with a Peltier device. The Peltier device can receive heat from a heat-producing electronic device, and can have a positive terminal and a negative terminal. A voltage regulator circuit can include a driver device electrically coupled to an input voltage and an output terminal electrically coupled to one of the Peltier device terminals. The voltage regulator circuit can also include a differential amplifier electrically coupled to a reference voltage, an input electrically coupled to another Peltier device terminal and an output electrically coupled to the driver device. The differential amplifier can, in response to a voltage produced by the Peltier device, modulate, with a positive temperature-voltage correlation, an output voltage on the output terminal of the driver device.

A system can control, with a positive temperature-voltage correlation, an output of a voltage regulator with a Peltier device. The Peltier device can receive heat from a heat-producing electronic device, and can have a positive terminal and a negative terminal. A voltage regulator circuit can include a driver device electrically coupled to an input voltage and an output terminal electrically coupled to one of the Peltier device terminals. The voltage regulator circuit can also include a differential amplifier electrically coupled to a reference voltage, an input electrically coupled to another Peltier device terminal and an output electrically coupled to the driver device. The differential amplifier can, in response to a voltage produced by the Peltier device, modulate, with a positive temperature-voltage correlation, an output voltage on the output terminal of the driver device.

A semiconductor device assembly (10) includes a multi-layer printed circuit board (PCB—40), a thermoelectric cooler (TEC—30), a chip (22), and packaged integrated circuitry (IC—26). The multi-layer PCB includes a lateral heat conducting path (60) formed in a recessed area (44) of the PCB. The TEC and the chip are disposed on the PCB, side-by-side to one another over the lateral heat conducting path. The TEC is configured to evacuate heat from the chip via the lateral heat conducting path, and to dissipate the evacuated heat via a first end of a heat sink (33) in thermal contact with the TEC. The packaged IC is disposed on an un-recessed area of the PCB, wherein the packaged IC is configured to dissipate heat via a second end of the heat sink that is in thermal contact with the packaged IC.

A semiconductor device includes a base plate, a case, a power semiconductor element, and a control semiconductor element. Case is provided on base plate. Power semiconductor element is disposed over base plate in case. Control semiconductor element is disposed in case. Case has an opening formed therein opposite to base plate. The semiconductor device further includes a cover to close opening in case. Cover has a hole formed in at least a portion of a region overlapping control semiconductor element in plan view.

An active heat transfer device is proposed for heat management in apparatuses such as mobile devices. The proposed heat transfer device may include a thermoelectric (TE) layer, and first and second electrodes both on lateral surfaces of the TE layer. When there is a voltage differential between the first and second electrodes, heat from a heat source may be transferred laterally within the TE layer from the first electrode to the second electrode.

An integrated circuit having a body comprised of semiconducting material has one or more electronic components formed in a first region of the body and at least another electronic component formed in the second region of the body. A thermal barrier separates the two regions. By one approach that thermal barrier comprises a gap formed in the body. The gap may comprise an air gap or may be partially or wholly filled with material that inhibits thermal conduction. The thermal barrier may at least substantially surround the aforementioned second region. The second region may also include one or more temperature sensors disposed therein. A temperature control circuit may use the corresponding temperature information from within the second region to actively control the second region temperature using a temperature forcing element that is disposed at least proximal to the second region.

An integrated circuit having a body comprised of semiconducting material has one or more electronic components formed in a first region of the body and at least another electronic component formed in the second region of the body. A thermal barrier separates the two regions. By one approach that thermal barrier comprises a gap formed in the body. The gap may comprise an air gap or may be partially or wholly filled with material that inhibits thermal conduction. The thermal barrier may at least substantially surround the aforementioned second region. The second region may also include one or more temperature sensors disposed therein. A temperature control circuit may use the corresponding temperature information from within the second region to actively control the second region temperature using a temperature forcing element that is disposed at least proximal to the second region.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.