Techniques are provided for forming one or more thermoelectric devices integrated within a substrate of an integrated circuit. Backside substrate processing may be used to form adjacent portions of the substrate that are doped with alternating dopant types (e.g., n-type dopants alternating with p-type dopants). The substrate can then be etched to form pillars of the various n-type and p-type portions. Adjacent pillars of opposite dopant type can be electrically connected together via a conductive layer. Additionally, the top portions of adjacent pillars are connected together, and the bottom portions of a next pair of adjacent pillars being coupled together, in a repeating pattern to ensure that current flows through the length of each of the doped pillars. The flow of current through alternating n-type and p-type doped material creates a heat flux that transfers heat from one end of the integrated thermoelectric device to the other end.

A stacked semiconductor device includes a cooling structure to increase the cooling efficiency of the stacked semiconductor device. The cooling structure includes various types of cooling components integrated into the stacked semiconductor device that are configured to remove and/or dissipate heat from dies of the stacked semiconductor device. In this way, the cooling structure reduces device failures and permits the stacked semiconductor device to operate at greater voltages, greater speeds, and/or other increased performance parameters by removing and/or dissipating heat from the stacked semiconductor device.

Techniques and mechanisms for regulating a temperature of a resonator structure. In an embodiment, a thermoelectric cooler (TEC) is thermally coupled to a resonator which is proximate thereto. The resonator supports operation with an oscillator circuit, wherein a resonance characteristic of the resonator contributes to oscillations of a master clock signal, or other oscillatory signal, which is provided with the oscillator circuit. The TEC provides Peltier functionality to selectively perform either one of heating or cooling the resonator. In another embodiment, the TEC is configured to conduct heat which is transferred via a path between the TEC and the resonator, wherein the path omits any circuitry which is to perform operations which are synchronized based on the oscillatory signal.

A heat dissipation assembly is configured to be thermally coupled to a heat source. The heat dissipation assembly includes a thermoelectric cooler and a heat dissipation component. The thermoelectric cooler has a cold surface and a hot surface. The cold surface faces away from the hot surface, and the cold surface is configured to be thermally coupled to the heat source. The heat dissipation component is thermally coupled to the hot surface of the thermoelectric cooler.

A system may include a heat-generating component and a thermoelectric cooler thermally coupled to the heat-generating component and arranged such that when an electrical parameter is applied to the thermoelectric cooler, a temperature gradient is created across the thermoelectric cooler in which a first side of the thermoelectric cooler proximate to the heat-generating component is at a lower temperature than a second side of the thermoelectric cooler opposite the first side and less proximate to the heat-generating component than the first side.

A system may include a heat-generating component and a thermoelectric cooler thermally coupled to the heat-generating component and arranged such that when an electrical parameter is applied to the thermoelectric cooler, a temperature gradient is created across the thermoelectric cooler in which a first side of the thermoelectric cooler proximate to the heat-generating component is at a lower temperature than a second side of the thermoelectric cooler opposite the first side and less proximate to the heat-generating component than the first side.

An image sensor comprises an array of sensor elements, each responsive to incident photon flux, and a readout circuit coupled electronically to the array of sensor elements and configured to release an electronic signal varying in dependence on the incident photon flux. A thermal-barrier zone separates the array of sensor elements from the readout circuit, and a solid-state cooler is coupled thermally to the array of sensor elements.

An image sensor comprises an array of sensor elements, each responsive to incident photon flux, and a readout circuit coupled electronically to the array of sensor elements and configured to release an electronic signal varying in dependence on the incident photon flux. A thermal-barrier zone separates the array of sensor elements from the readout circuit, and a solid-state cooler is coupled thermally to the array of sensor elements.

A jet impingement cooling assembly for semiconductor devices includes a heat exchange base having an inlet chamber and an outlet chamber. An inlet connection may be in fluid connection with the inlet chamber, while an outlet connection may be in fluid connection with the outlet chamber. A jet plate may be coupled to the inlet chamber, and a jet pedestal may be formed on the jet plate and having a raised surface with a jet nozzle formed therein.

A tactile representation device is provided. The tactile representation device includes a substrate and a semiconductor temperature control assembly disposed on the substrate. The substrate includes a plurality of deformable regions and a plurality of node regions that are alternately disposed in a first direction, wherein the deformable regions are deformable but the node regions are not deformable. The semiconductor temperature control assembly includes a plurality of semiconductor temperature control units. Each of the semiconductor temperature control units includes a hot terminal electrode, a P-side electrode, an N-side electrode, a P-type semiconductor, and an N-type semiconductor. Each of the hot terminal electrodes is disposed in each of the deformable regions, and each of the P-side electrodes and each of the N-side electrodes are disposed in each of the node regions.