Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

A circuit board includes: an electrically insulating part and an electrically conductive part; at least one semiconductor chip embedded into the electrically insulating part in a part of the circuit board; and a cooling area above and below the at least one semiconductor chip. The electrically conductive part includes a first outer conductive layer on the first surface, a second outer conductive layer on the second surface, and a first inner conductive layer which is electrically connected to the semiconductor chip. The first inner conductive layer is electrically insulated from the first outer conductive layer and from the second outer conductive layer by the electrically insulating part in the cooling area, or is electrically connected to the first outer conductive layer outside the cooling area.

A circuit board includes: an electrically insulating part and an electrically conductive part; at least one semiconductor chip embedded into the electrically insulating part in a part of the circuit board; and a cooling area above and below the at least one semiconductor chip. The electrically conductive part includes a first outer conductive layer on the first surface, a second outer conductive layer on the second surface, and a first inner conductive layer which is electrically connected to the semiconductor chip. The first inner conductive layer is electrically insulated from the first outer conductive layer and from the second outer conductive layer by the electrically insulating part in the cooling area, or is electrically connected to the first outer conductive layer outside the cooling area.

A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.

An immersion-type liquid cooling heat dissipation sink is provided. The immersion-type liquid cooling heat dissipation sink includes a heat dissipation substrate layer and a surface film layer. The surface film layer is formed on the heat dissipation substrate layer. The heat dissipation substrate layer is a porous substrate that is immersed in an immersion-type coolant. A contact angle between the surface film layer and the immersion-type coolant is less than a contact angle between the heat dissipation substrate layer and the immersion-type coolant. A thickness of the surface film layer is less than an effective thickness of 5 μm.

A weight optimized stiffener for use in a semiconductor device is disclosed herein. In one example, the stiffener is made of AlSiC for its weight and thermal properties. An O-ring provides sealing between a top surface of the stiffener and a component of the semiconductor device and adhesive provides sealing between a bottom surface of the stiffener and another component of the semiconductor device. The stiffener provides warpage control for a lidless package while enabling direct liquid cooling of a chip or substrate.

A semiconductor chip includes semiconductor dice contained in a packaging apparatus including a cover and a plate, thereby forming a vapor chamber. The semiconductor dice and intermediate layers are alternately stacked. A capillary mechanism is provided on a horizontal internal face of the cover. Nets are provided on vertical internal faces of the cover, around the capillary mechanism. Each of the intermediate layers includes protuberances in contact with the nets. A channel is defined between any adjacent two of the protuberances. The channels travel past the intermediate layers. Coolant filled in the vapor chamber is turned into vapor after absorbing heat. The vapor ascends to the cover via the channels. The coolant is returned into liquid after transferring heat to the cover. The liquid descends to the plate. Thus, the coolant is circulated in the vapor chamber. Each of the intermediate layers includes a capillary structure to facilitate the circulation of the coolant.