Provided are an adapter board and a method for forming the same, a packaging method, and a package structure. One form of a method for forming an adapter board includes: providing a base, including an interconnect region and a capacitor region, the base including a front surface and a rear surface that are opposite each other; etching the front surface of the base, to form a first trench in the base of the interconnect region and form a second trench in the base of the capacitor region; forming a capacitor in the second trench; etching a partial thickness of the base under the first trench, to form a conductive via; forming a via interconnect structure in the conductive via; and thinning the rear surface of the base, to expose the via interconnect structure.

A package comprising a substrate, a first integrated device coupled to a first surface of the substrate, and a second integrated device coupled to a second surface of the substrate. The substrate includes a dielectric layer and a plurality of interconnects. The plurality of interconnects includes a first plurality of interconnects configured as a first inductor and a second plurality of interconnects configured as a second inductor. The first integrated device is configured to be coupled to the first inductor. The second integrated device is configured to be coupled to the second inductor. The second integrated device is configured to tune the first inductor through the second inductor.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A method includes: forming an interconnect structure over a semiconductor substrate. The interconnect structure includes: a magnetic core and a conductive coil winding around the magnetic core and electrically insulated from the magnetic core, wherein the conductive coil has horizontally-extending conductive lines and vertically-extending conductive vias electrically connecting the horizontally-extending conductive lines, wherein the magnetic core and the conductive coil are arranged in an inductor zone of the interconnect structure. The interconnect structure also includes a dielectric material electrically insulating the magnetic core from the conductive coil, and a connecting metal line adjacent to and on the outside of the inductor zone. The connecting metal line is electrical isolated from the inductor zone. The connecting metal line includes an upper surface lower than an upper surface of the second conductive vias and a bottom surface higher than a bottom surface of the first conductive vias.

An apparatus is provided which comprises: one or more pads comprising metal on a first substrate surface, the one or more pads to couple with contacts of an integrated circuit die, one or more substrate layers comprising dielectric material, one or more conductive contacts on a second substrate surface, opposite the first substrate surface, the one or more conductive contacts to couple with contacts of a printed circuit board, one or more inductors on the one or more substrate layers, the one or more inductors coupled with the one or more conductive contacts and the one or more pads, and highly thermally conductive material between the second substrate surface and a printed circuit board surface, the highly thermally conductive material contacting the one or more inductors. Other embodiments are also disclosed and claimed.

A semiconductor package structure includes a substrate, a first redistribution layer, a semiconductor die, a silicon capacitor, and a first bump structure. The first redistribution layer is disposed over the substrate. The semiconductor die is disposed over the first redistribution layer. The silicon capacitor is disposed below the first redistribution layer and is electrically coupled to the semiconductor die, wherein the silicon capacitor includes a semiconductor substrate and a plurality of capacitor cells embedded in the semiconductor substrate. The first bump structure is disposed between the silicon capacitor and the substrate.

A semiconductor structure includes an interposer substrate having an upper surface, a lower surface opposite to the upper surface, and a device region. A first redistribution layer is formed on the upper surface of the interposer substrate. A guard ring is formed in the interposer substrate and surrounds the device region. At least a through-silicon via (TSV) is formed in the interposer substrate. An end of the guard ring and an end of the TSV that are near the upper surface of the interposer substrate are flush with each other, and are electrically connected to the first redistribution layer.

A configurable capacitance device includes a semiconductor substrate including a plurality of integrally formed capacitors; and a separate interconnect structure coupled to the semiconductor substrate, wherein the separate interconnect structure is configurable to electrically couple two or more of the plurality of integrally formed capacitors together in a parallel configuration.

A method according to an embodiment is for forming a capacitor structure on a wafer. A first capacitor is formed on a first side of a wafer, and a second capacitor is formed on a second side of the wafer. The capacitor structure includes the first capacitor and the second capacitor. A trench capacitor is fabricated at both ends of an interposer, which can increase capacitance, and greatly improve the stability of the supplied power.

Disclosed herein are asymmetric cored integrated circuit (IC) package supports, and related devices and methods. For example, in some embodiments, an IC package support may include a core region having a first face and an opposing second face, a first buildup region at the first face of the core region, and a second buildup region at the second face of the core region. A thickness of the first buildup region may be different than a thickness of the second buildup region. In some embodiments, an inductor may be included in the core region.