A package comprising a first integrated device comprising a first plurality of under bump metallization interconnects; a second integrated device comprising a second plurality of under bump metallization interconnects; a bridge coupled to the first integrated device and the second integrated device; an encapsulation layer at least partially encapsulating the first integrated device, the second integrated device, and the bridge; a metallization portion located over the first integrated device, the second integrated device, the bridge and the encapsulation layer, where the metallization portion includes at least one dielectric layer and a plurality of metallization interconnects; a first plurality of pillar interconnects coupled to the first plurality of under bump metallization interconnects, the first plurality of interconnects located in the encapsulation layer; and a second plurality of pillar interconnects coupled to the second plurality of under bump metallization interconnects, the second plurality of pillar interconnects located in the encapsulation layer.

A semiconductor package may be presented. The semiconductor package includes a first dielectric layer including a first surface and a second surface. First and second conductive lands are disposed on the first surface of the first dielectric layer. A first column formed by the first conductive lands and a second column formed by the second conductive lands are spaced apart from each other. Outer traces extend from the second conductive lands, and inner traces are disposed on the second surface of the first dielectric layer. Vias penetrate the first dielectric layer and respectively connect the first conductive lands to the inner traces. A semiconductor die is disposed on the first surface of the first dielectric layer.

In an embodiment, a device includes: a processor die including circuit blocks, the circuit blocks including active devices of a first technology node; a power gating die including power semiconductor devices of a second technology node, the second technology node larger than the first technology node; and a first redistribution structure including first metallization patterns, the first metallization patterns including power supply source lines and power supply ground lines, where a first subset of the circuit blocks is electrically coupled to the power supply source lines and the power supply ground lines through the power semiconductor devices, and a second subset of the circuit blocks is permanently electrically coupled to the power supply source lines and the power supply ground lines.

A stacked semiconductor device encompasses a mother-substrate, rectangular chips mounted on the mother-substrate, and bump-connecting mechanisms connecting the mother-substrate and the chips by a non-provisional joint-process with a height lower than the height of a provisional joint-process jointing the mother-substrate and the chips. The mother-substrate has unit elements arranged in each of unit-element areas assigned to a first lattice defined on a first main surface of the mother-substrate, the first main surface is divided into chip-mounting areas along a second lattice having a smaller number of meshes than the first lattice. The bump-connecting mechanisms are arranged along a third lattice corresponding to the arrangement of the unit elements, and transmit signals from the unit elements independently to each of the circuits merged in the chips. After the provisional joint-process, the bump-connecting mechanisms can be separated into substrate-side and chip-side connection-elements.

A packaging method includes steps of: forming first and second wiring layers electrically connected to each other on two opposite surfaces of a substrate; then configuring mother substrate interconnecting bumps on the first wiring layer and along perimeter of a daughter substrate unit, and then cutting along the perimeter of the daughter substrate unit to expose lateral faces of the mother substrate interconnecting bumps and configuring solder materials thereon; then configuring first and second chips on the first and the second wiring layers to form electrical interconnection between the two chips. A package structure enables interconnecting two chips through one single daughter substrate unit with its wiring layers directly connecting with lateral face contacts of the mother carrier substrate through the mother substrate interconnecting bumps. Hence, area of the daughter substrate unit is reduced; lengths of the interconnection paths are shortened, and qualities of communication and space utilization are enhanced.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

A radio-frequency module includes a module substrate, a power amplifier, and a control circuit configured to control the power amplifier. The control circuit includes a temperature sensor. The power amplifier and the control circuit are stacked one on top of another on a principal surface of the module substrate.

A method includes forming a layer stack with at least one electrically insulating layer structure and at least one patterned electrically conductive layer structure on a temporary carrier, the layer stack includes a lower surface adjoining the temporary carrier and an upper surface opposite to the lower surface; mounting a first component at the upper surface; placing a first frame structure at the upper surface, the first frame structure surrounding at least partially the first component; covering the first component with a first coating material, the first coating material spatially extending at least partially into voids at or within the first frame structure and into voids at or within the layer stack; and removing the temporary carrier. The lower surface of the layer stack is an even surface. The opposite upper surface of the layer stack is an uneven surface. An electronic package can be manufactured with the described method.

A semiconductor package includes a first redistribution substrate, a first semiconductor chip mounted on the first redistribution substrate, a first molding layer on the first redistribution substrate and covering a top surface and lateral surfaces of the first semiconductor chip, a second redistribution substrate on the first molding layer, and an adhesive film between the second redistribution substrate and the first molding layer. The adhesive film is spaced apart from the first semiconductor chip and covers a top surface of the first molding layer. A lateral surface of the adhesive film is coplanar with a lateral surface of the second redistribution substrate.

In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.