Various embodiments of fanout packages are disclosed. A method of forming a microelectronic assembly is disclosed. The method can include bonding a first surface of at least one microelectronic substrate to a surface of a carrier using a direct bonding technique without an intervening adhesive, the microelectronic substrate having a plurality of conductive interconnections on at least one surface of the microelectronic substrate. The method can include applying a molding material to an area of the surface of the carrier surrounding the microelectronic substrate to form a reconstituted substrate. The method can include processing the microelectronic substrate. The method can include singulating the reconstituted substrate at the area of the surface of the carrier and at the molding material to form the microelectronic assembly.

Embodiments may relate to a microelectronic package that includes an overmold material, a redistribution layer (RDL) in the overmold material, and a die in the overmold material electrically coupled with the RDL on an active side of the die. The RDL is configured to provide electrical interconnection within the overmold material and includes at least one mold interconnect. The microelectronic package may also include a through-mold via (TMV) disposed in the overmold material and electrically coupled to the RDL by the mold interconnect. In some embodiments, the microelectronics package further includes a surface mount device (SMD) in the overmold material. The microelectronics package may also include a substrate having a face on which the overmold is disposed.

A power semiconductor device in which the size of an insulating substrate is reduced and connection failure can be suppressed includes an insulating substrate, a semiconductor element, and a printed circuit board. The semiconductor element is bonded to one main surface of the insulating substrate. The printed circuit board is bonded to face the semiconductor element. The semiconductor element has a main electrode and a signal electrode. The printed circuit board includes a core member, a first conductor layer, and a second conductor layer. The second conductor layer has a bonding pad. The printed circuit board has a missing portion. A metal column portion is arranged to pass through the inside of the missing portion and reach the insulating substrate. The signal electrode and the bonding pad are connected by a metal wire. The metal column portion and the insulating substrate are bonded.

A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die at a first level, a second IC die at a second level, and a third IC die at a third level, the second level being in between the first level and the third level. A first interface between the first level and the second level is electrically coupled with high-density interconnects of a first pitch and a second interface between the second level and the third level is electrically coupled with interconnects of a second pitch. In some embodiments, at least one of the first IC die, second IC die, and third IC die comprises another microelectronic assembly. In other embodiments, at least one of the first IC die, second IC die, and third IC die comprises a semiconductor die.

A semiconductor package may include at least one first rewiring structure, the at least one first rewiring structure including a plurality of first insulating layers vertically stacked and a plurality of first rewiring patterns included in the plurality of first insulating layers, at least one semiconductor chip on the at least one first rewiring structure, and at least one molding layer covering the at least one semiconductor chip, wherein each of the plurality of first rewiring patterns includes, a first conductive pattern, the first conductive pattern including a curved upper surface, and a first seed pattern covering a side surface and a lower surface of the first conductive pattern, and each of the first seed patterns of the plurality of first rewiring patterns having a same shape.

A package structure with a wettable side surface and a manufacturing method thereof, and a vertical package module are disclosed. The package structure includes a first dielectric layer, a chip and a circuit layer. The first dielectric layer is provided with a package cavity, side wall bonding pads are arranged on a side wall of the first dielectric layer and located outside the package cavity. The chip is packaged inside the package cavity, pins of the chip face first surface of the first dielectric layer. The circuit layer is arranged on the first surface of the first dielectric layer, and the circuit layer is directly or indirectly connected to the side wall bonding pads and the pins of the chip.

A semiconductor package including a base chip; a semiconductor chip having a lower surface on which connection pads are disposed, the semiconductor chip being mounted on an upper surface of the base chip; a plurality of bumps on the connection pads and electrically connecting the base chip to the semiconductor chip; an adhesive film between the base chip and the semiconductor chip and fixing the semiconductor chip to the base chip; and an encapsulant on the base chip and encapsulating the semiconductor chip, wherein the semiconductor chip includes a central portion spaced apart from the upper surface of the base chip by a first distance, and an edge portion spaced apart from the upper surface of the base chip by a second distance, the edge portion being outside of the central portion, and a ratio of the second distance to the first distance is about 0.8 to about 1.0.

A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes a redistribution circuit structure; a first semiconductor chip disposed on the redistribution structure and having a first active surface on which a first conductive post is disposed; a second semiconductor chip disposed above the first semiconductor chip and having a second active surface on which a first conductor is disposed; and a first encapsulant disposed on the redistribution circuit structure and encapsulating at least the first semiconductor chip, wherein the first conductive post and the first conductor are aligned and bonded to each other to electrically connect the first semiconductor chip and the second semiconductor chip.

A package includes a redistribution structure, a die package on a first side of the redistribution structure including a first die connected to a second die by metal-to-metal bonding and dielectric-to-dielectric bonding, a dielectric material over the first die and the second die and surrounding the first die, and a first through via extending through the dielectric material and connected to the first die and a first via of the redistribution structure, a semiconductor device on the first side of the redistribution structure includes a conductive connector, wherein a second via of the redistribution structure contacts the conductive connector of the semiconductor device, a first molding material on the redistribution structure and surrounding the die package and the semiconductor device, and a package through via extending through the first molding material to contact a third via of the redistribution structure.

Provided is a semiconductor package including a pair of differential signal wiring lines including a first differential signal wiring line and a second differential signal wiring line, extending parallel to and spaced apart from each other, a lower equal potential plate in a lower wiring layer under the signal wiring layer, an upper equal potential plate in an upper wiring layer above the signal wiring layer, and a wiring insulating layer adjacent to the pair of differential signal wiring lines, the lower equal potential plate, and the upper equal potential plate, the wiring insulating layer filling spaces between the signal wiring layer, the lower wiring layer, and the upper wiring layer, at least one of the lower equal potential plate and the upper equal potential plate including an impedance opening overlapping the pair of differential signal wiring lines in a vertical direction and is filled by the wiring insulating layer.