H01L24/50

FLEX BONDED INTEGRATED CIRCUITS
20230299035 · 2023-09-21 ·

Embodiments relate to an integrated circuit package having an integrated circuit die connected to a package substrate through conductors of a flex cable. The flex cable includes an insulating housing made of an insulating material and a plurality of conductors disposed inside the insulating housing. Each conductor of the plurality of conductors is connected to a first contact of a plurality of contacts of the integrated circuit die and a second contact of a plurality of contacts of the package substrate.

Tape carrier assemblies having an integrated adhesive film

Introduced here are carrier tape assemblies that can improve efficiency and reduce costs when utilized in the handling, transport, or storage of semiconductor components. A carrier tape assembly can include an adhesive film affixed to an elongated and/or extruded carrier tape. For example, the adhesive film may be integrally laminated onto the top surface of the elongate carrier tape as a single continuous (i.e., unbroken) sheet. The adhesive film may substantially conform to the top surface of the elongate carrier tape, including any punched cavities for holding semiconductor components. Proper securement of the semiconductor components to the carrier tape assembly depends on the adhesive property of the constituent material(s) of the adhesive film.

CIRCUIT SUBSTRATE

A power circuit is provided with two bus bars in a single plane connected to terminals of a plurality of FETs and includes an insulating region interposed between the bus bars, the power circuit including: a first conductive piece to which one group of the plurality of FETs is fixed; a second conductive piece to which another group of the plurality of FETs is fixed, wherein the plurality of FETs are alternately fixed to the first conductive piece and the second conductive piece.

DISPLAY DEVICE AND ELECTRONIC DEVICE
20220013591 · 2022-01-13 ·

To provide a display device that is suitable for increasing in size, a display device in which display unevenness is suppressed, or a display device that can display an image along a curved surface. The display device includes a first display panel and a second display panel each including a pair of substrates. The first display panel and the second display panel each include a first region which can transmit visible light, a second region which can block visible light, and a third region which can perform display. The third region of the first display panel and the first region of the second display panel overlap each other. The third region of the first display panel and the second region of the second display panel do not overlap each other.

Chip packaging device, chip packaging method, and package chip

The present disclosure provides a chip packaging device, a chip packaging method, and a package chip, and is related to a technical field of chip packaging. The chip packaging device includes conductive sheets, a vacuum suction movable assembly defining a variable suction surface, and a heating assembly. The variable suction surface sucks the plurality of conductive sheets. A first end of each of the conductive sheets is disposed above a corresponding bonding pads. A second end of each of the conductive sheets is disposed above a corresponding welding pin, so that when the variable suction surface is pressed down, the first end of each of the conductive sheets is pressed onto the corresponding bonding pad, and the second end of each of the conductive sheets is pressed onto the corresponding welding pin. The heating assembly heats solders on the bonding pads and the welding pins.

Semiconductor device and method for fabricating the same

A semiconductor device in which reliability and production yield are improved by reducing or preventing the spreading of cracks that may occur in the die sawing process, and a method for fabricating the same are provided. The semiconductor device includes a substrate which includes a first chip region and a scribe lane region surrounding the first chip region, a first low-k insulating film, which includes a first insulating material having a dielectric constant lower than silicon oxide, on the substrate in the first chip region, a wiring structure, which includes a second low-k insulating film including the first insulating material and a first wiring pattern in the second low-k insulating film, on the substrate in the scribe lane region, and a first protective insulating film, which includes a second insulating material different from the first insulating material, between the first low-k insulating film and the wiring structure.

Impedance Controlled Electrical Interconnection Employing Meta-Materials
20230020310 · 2023-01-19 ·

A method of improving electrical interconnections between two electrical is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.

Structure and method for isolation of bit-line drivers for a three-dimensional NAND

Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the 3D memory device includes a peripheral circuitry formed on a first substrate. The peripheral circuitry includes a plurality of peripheral devices on a first side of the first substrate, a first interconnect layer, and a deep-trench-isolation on a second side of the first substrate, wherein the first and second sides are opposite sides of the first substrate and the deep-trench-isolation is configured to provide electrical isolation between at least two neighboring peripheral devices. The 3D memory device also includes a memory array formed on a second substrate. The memory array includes at least one memory cell and a second interconnect layer, wherein the second interconnect layer of the memory array is bonded with the first interconnect layer of the peripheral circuitry, and the peripheral devices are electrically connected with the memory cells.

Interconnect structure, semiconductor structure including interconnect structure and method for forming the same

An interconnect structure includes a plurality of first pads, a plurality of second pads, a plurality of first conductive lines in a first layer, a plurality of second conductive lines in a second layer, and a plurality of n.sup.th conductive lines in an n.sup.th layer. The first pads and the second pads respectively are grouped into a first, a second and an n.sup.th group. Each of the first pads in first group is connected to one of the second pads in the first group by one of the first conductive lines. Each of the first pads in the second group is connected to one of the second pads in the second group by one of the second conductive lines. Each of the first pads in the n.sup.th group is connected to one of the second pads in the n.sup.th group by one of the n.sup.th conductive lines.

Mask-integrated surface protective tape with release liner

A mask-integrated surface protective tape with a release liner, containing: a base film, a temporary-adhesive layer, a release film, a mask material layer, and a release liner, in this order, wherein the release film and the release liner each have one release-treated surface, and the release-treated surfaces of the release film and the release liner each are in contact with the mask material layer, and wherein the peeling strength between the release liner and the mask material layer is smaller than the peeling strength between the release film and the mask material layer.