A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

A wire bonding method includes bonding a tip of a wire provided through a clamp and a capillary onto a bonding pad of a chip, moving the capillary to a connection pad of a substrate corresponding to the bonding pad, bonding the wire to the connection pad to form a bonding wire connecting the bonding pad to the connection pad, before the capillary is raised from the connection pad, applying a electrical signal to the wire to detect whether the wire and the connection pad are in contact with each other, changing a state of the clamp to a closed state when the wire is not in contact with the connection pad and maintaining the state of the clamp in an open state when the wire is in contact with the connection pad, and raising the capillary from the connection pad while maintaining the state of the clamp.

In some examples, a semiconductor package comprises a semiconductor die; a conductive member coupled to the semiconductor die; and a wirebonded protrusion coupled to the conductive member. A physical structure of the wirebonded protrusion is determined at least in part by a sequence of movements of a wirebonding capillary used to form the wirebonded protrusion, the wirebonded protrusion including a ball bond and a bond wire, and the bond wire having a proximal end coupled to the ball bond. The bond wire has a distal end. The package also comprises a mold compound covering the semiconductor die, the conductive member, and the wirebonded protrusion. The distal end is in a common vertical plane with the ball bond and is not connected to a structure other than the mold compound.

An apparatus and method for providing an artificial standoff to the bottom of leads on a QFN device sufficient to provide a gap that changes the fluid dynamics of solder flow and create a unique capillary effect that drives solder up the of leads of a QFN device when it is attached to a printed wiring board (PWB).

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

An apparatus and method for providing an artificial standoff to the bottom of leads on a QFN device sufficient to provide a gap that changes the fluid dynamics of solder flow and create a unique capillary effect that drives solder up the of leads of a UN device when it is attached to a printed wiring board (PWB).

A multifaceted capillary that can be used in a wire-bonding machine to create a multi-segment wire-bond is disclosed. The multifaceted capillary is shaped to apply added pressure and thickness to an outer segment of the multi-segment wire-bond that is closest to the wire loop. The added pressure eliminates a gap under a heel portion of the multi-segment wire-bond and the added thickness increases a mechanical strength of the heel portion. As a result, a pull test of the multi-segment wire-bond may be higher than a single-segment wire-bond and the multi-segment wire-bond may resist cracking, lifting, or breaking.

In some examples, a semiconductor package comprises a semiconductor die; a conductive member coupled to the semiconductor die; and a wirebonded protrusion coupled to the conductive member. A physical structure of the wirebonded protrusion is determined at least in part by a sequence of movements of a wirebonding capillary used to form the wirebonded protrusion, the wirebonded protrusion including a ball bond and a bond wire, and the bond wire having a proximal end coupled to the ball bond. The bond wire has a distal end. The package also comprises a mold compound covering the semiconductor die, the conductive member, and the wirebonded protrusion. The distal end is in a common vertical plane with the ball bond and is not connected to a structure other than the mold compound.