A color changing substrate comprises a substrate comprising emission areas and non-emission areas, a color filter layer on the substrate and comprising a light blocking member partitioning the emission areas and the non-emission areas, and a plurality of color filters in areas surrounded by the light blocking member, a bank overlapping the light blocking member, a wavelength control layer comprising wavelength conversion layers and a light transmitting layer in areas surrounded by the bank, a reflective layer overlapping the bank, a first metal oxide layer overlapping the reflective layer, and a self-assembled layer overlapping the first metal oxide layer.

Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually assiocaited solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.

A pixel includes an emission area and a non-emission area; first to fourth alignment electrodes spaced apart from each other in the emission area and an area of the non-emission area; an insulating layer disposed on the first to fourth alignment electrodes; first to fourth bridge patterns disposed on the insulating layer in the non-emission area; a bank disposed on the first to fourth bridge patterns in the non-emission area, and including a first opening and a second opening; first and second pixel electrodes disposed in the emission area; and light emitting elements disposed in the emission area, and electrically connected with the first and second pixel electrodes. The first alignment electrode, the first bridge pattern, and the first pixel electrode are electrically connected to each other. The third alignment electrode, the third bridge pattern, and the second pixel electrode are electrically connected to each other.

In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

A method is provided for localised deposition of a material over an element, including deposition of a portion of the material over a portion of a surface of a support; positioning of a portion of the element against the portion of the material; annealing of the material portion increasing, at the end of the treatment, the adhesion force of the material against the portion of the element, the materials of the portion of the element and of the portion of the surface of the support being selected such that the adhesion of the material against the portion of the element is, at the end of the annealing, higher than that of the material against the portion of the surface of the support; and separation of the element and the support at the interface between the material and the portion of the surface of the support, the material remaining secured to the portion of the element.

Embodiments disclosed herein include multi-die modules and methods of assembling multi-die modules. In an embodiment, a multi-die module comprises a first die. In an embodiment the first die comprises a first pedestal, a plateau around the first pedestal, and a stub extending up from the plateau. In an embodiment, the multi-die module further comprises a second die. In an embodiment, the second die comprises a second pedestal, where the second pedestal is attached to the first pedestal.

Hybrid bonded 3D die stacks with improved thermal performance, related apparatuses, systems, and methods of fabrication are disclosed. Such hybrid bonded 3D die stacks include multiple levels of dies including a level of the 3D die stack with one or more integrated circuit dies and one or more thermal dies both directly bonded to another level of the 3D die stack.

Techniques and mechanisms for mitigating stress on hybrid bonded interfaces in a multi-tier arrangement of integrated circuit (IC) dies. In an embodiment, first dies are bonded at a host die each via a respective one of first hybrid bond interfaces, wherein a second one or more dies are coupled to the host die each via a respective one of the first dies, and via a respective second hybrid bond interface. Stress at one of the hybrid bond interfaces is mitigated by properties of a first dielectric layer that extends to that hybrid bond interface. In another embodiment, stress at a given one of the hybrid bond interfaces is mitigated by properties of a dummy chip—or alternatively, properties of a patterned encapsulation structure—which is formed on the given hybrid bond interface.

A transfer printing method and a transfer printing apparatus. The transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of positions of the plurality of devices on the transfer substrate; obtaining second position information of corresponding positions, on a target substrate, of devices to be transferred; comparing the first position information with the second position information to obtain first target position information recording a first transfer position; and aligning the transfer substrate with the target substrate and performing a site-designated laser irradiation on at least part of devices on the transfer substrate corresponding to the first transfer position, simultaneously, according to the first target position information, so as to transfer the at least part of the devices from the transfer substrate to the target substrate.